On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvemen...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/82336 http://hdl.handle.net/10220/19577 |
| _version_ | 1826117680757735424 |
|---|---|
| author | Zhang, Xueliang Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhengang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Xueliang Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhengang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan |
| author_sort | Zhang, Xueliang |
| collection | NTU |
| description | Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. |
| first_indexed | 2024-10-01T04:31:17Z |
| format | Journal Article |
| id | ntu-10356/82336 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:31:17Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/823362020-03-07T14:02:39Z On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes Zhang, Xueliang Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhengang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2014-06-04T07:37:08Z 2019-12-06T14:53:34Z 2014-06-04T07:37:08Z 2019-12-06T14:53:34Z 2014 2014 Journal Article Zhang, Z. H., Liu, W., Tan, S. T., Ju, Z., Ji, Y., Kyaw, Z., et al. (2014). On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes. Optics Express, 22(S3), A779-A789. 1094-4087 https://hdl.handle.net/10356/82336 http://hdl.handle.net/10220/19577 10.1364/OE.22.00A779 en Optics express © 2014 Optical Society of America. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhang, Xueliang Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhengang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes |
| title | On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes |
| title_full | On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes |
| title_fullStr | On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes |
| title_full_unstemmed | On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes |
| title_short | On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes |
| title_sort | on the mechanisms of ingan electron cooler in ingan gan light emitting diodes |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/82336 http://hdl.handle.net/10220/19577 |
| work_keys_str_mv | AT zhangxueliang onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT kyawzabu onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT zhangzihui onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT liuwei onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT tansweetiam onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT juzhengang onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT jiyun onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT hasanovnamig onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT zhubinbin onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT lushunpeng onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT zhangyiping onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT sunxiaowei onthemechanismsofinganelectroncoolerininganganlightemittingdiodes AT demirhilmivolkan onthemechanismsofinganelectroncoolerininganganlightemittingdiodes |