An Epitaxial Ferroelectric Tunnel Junction on Silicon

An Epitaxial Ferroelectric Tunnel Junction on Silicon

Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of int...

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Bibliographic Details
Main Authors: Li, Zhipeng, Guo, Xiao, Lu, Hui-Bin, Zhang, Zaoli, Song, Dongsheng, Cheng, Shaobo, Bosman, Michel, Zhu, Jing, Dong, Zhili, Zhu, Weiguang
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2016
Subjects:
Ferroelectric tunnel junction
Non-volatile memory
Tunneling electroresistance
Epitaxial growth
Pulsed laser deposition
Online Access:https://hdl.handle.net/10356/82373
http://hdl.handle.net/10220/39930

Internet

https://hdl.handle.net/10356/82373
http://hdl.handle.net/10220/39930

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