An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells
Zinc oxysulfide buffer layers with [O]:[S] of 1:0, 6:1, 4:1, 2:1, and 1:1 ratios were deposited by atomic layer deposition on Cu(In,Ga)(S,Se)2 absorbers and made into finished solar cells. We demonstrate using Time-Resolved Photoluminescence that the minority carrier lifetime of Zn(O,S) buffered sol...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/82433 http://hdl.handle.net/10220/40013 |
| _version_ | 1811692221386194944 |
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| author | Chua, Rou Hua Li, Xianglin Walter, Thomas Teh, Lay Kuan Hahn, Thomas Hergert, Frank Mhaisalkar, Subodh Wong, Lydia Helena |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Chua, Rou Hua Li, Xianglin Walter, Thomas Teh, Lay Kuan Hahn, Thomas Hergert, Frank Mhaisalkar, Subodh Wong, Lydia Helena |
| author_sort | Chua, Rou Hua |
| collection | NTU |
| description | Zinc oxysulfide buffer layers with [O]:[S] of 1:0, 6:1, 4:1, 2:1, and 1:1 ratios were deposited by atomic layer deposition on Cu(In,Ga)(S,Se)2 absorbers and made into finished solar cells. We demonstrate using Time-Resolved Photoluminescence that the minority carrier lifetime of Zn(O,S) buffered solar cells is dependent on the sulfur content of the buffer layer.τ1 for devices with [O]:[S] of 1:0–4:1 are <10 ns, indicating efficient charge separation in devices with low sulfur content. An additional τ2 is observed for relaxed devices with [O]:[S] of 2:1 and both relaxed and light soaked devices with [O]:[S] of 1:1. Corroborated with one-dimensional electronic band structure simulation results, we attribute this additional decay lifetime to radiative recombination in the absorber due to excessive acceptor-type defects in sulfur-rich Zn(O,S) buffer layer that causes a buildup in interface-barrier for charge transport. A light soaking step shortens the carrier lifetime for the moderately sulfur-rich 2:1 device when excess acceptors are passivated in the buffer, reducing the crossover in the dark and illuminated I-V curves. However, when a high concentration of excess acceptors exist in the buffer and cannot be passivated by light soaking, as with the sulfur-rich 1:1 device, then cell efficiency of the device will remain low. |
| first_indexed | 2024-10-01T06:32:20Z |
| format | Journal Article |
| id | ntu-10356/82433 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:32:20Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/824332021-01-08T07:17:07Z An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells Chua, Rou Hua Li, Xianglin Walter, Thomas Teh, Lay Kuan Hahn, Thomas Hergert, Frank Mhaisalkar, Subodh Wong, Lydia Helena School of Materials Science & Engineering Energy Research Institute @ NTU (ERI@N) Photoluminescence Zinc oxysulfide buffer layers with [O]:[S] of 1:0, 6:1, 4:1, 2:1, and 1:1 ratios were deposited by atomic layer deposition on Cu(In,Ga)(S,Se)2 absorbers and made into finished solar cells. We demonstrate using Time-Resolved Photoluminescence that the minority carrier lifetime of Zn(O,S) buffered solar cells is dependent on the sulfur content of the buffer layer.τ1 for devices with [O]:[S] of 1:0–4:1 are <10 ns, indicating efficient charge separation in devices with low sulfur content. An additional τ2 is observed for relaxed devices with [O]:[S] of 2:1 and both relaxed and light soaked devices with [O]:[S] of 1:1. Corroborated with one-dimensional electronic band structure simulation results, we attribute this additional decay lifetime to radiative recombination in the absorber due to excessive acceptor-type defects in sulfur-rich Zn(O,S) buffer layer that causes a buildup in interface-barrier for charge transport. A light soaking step shortens the carrier lifetime for the moderately sulfur-rich 2:1 device when excess acceptors are passivated in the buffer, reducing the crossover in the dark and illuminated I-V curves. However, when a high concentration of excess acceptors exist in the buffer and cannot be passivated by light soaking, as with the sulfur-rich 1:1 device, then cell efficiency of the device will remain low. EDB (Economic Devt. Board, S’pore) Published version 2016-02-19T07:10:37Z 2019-12-06T14:55:31Z 2016-02-19T07:10:37Z 2019-12-06T14:55:31Z 2016 Journal Article Chua, R. H., Li, X., Walter, T., Teh, L. K., Hahn, T., Hergert, F., Mhaisalkar, S., et al. (2016). An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells. Applied Physics Letters, 108(4), 043505-. 0003-6951 https://hdl.handle.net/10356/82433 http://hdl.handle.net/10220/40013 10.1063/1.4940913 en Applied Physics Letters © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4940913]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | Photoluminescence Chua, Rou Hua Li, Xianglin Walter, Thomas Teh, Lay Kuan Hahn, Thomas Hergert, Frank Mhaisalkar, Subodh Wong, Lydia Helena An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells |
| title | An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells |
| title_full | An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells |
| title_fullStr | An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells |
| title_full_unstemmed | An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells |
| title_short | An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells |
| title_sort | experimentally supported model for the origin of charge transport barrier in zn o s cigsse solar cells |
| topic | Photoluminescence |
| url | https://hdl.handle.net/10356/82433 http://hdl.handle.net/10220/40013 |
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