Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation
High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high an...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/82623 http://hdl.handle.net/10220/49074 |
| _version_ | 1826121930858561536 |
|---|---|
| author | Zhu, Minmin Wu, Jing Du, Zehui Tsang, Siuhon Teo, Edwin Hang Tong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhu, Minmin Wu, Jing Du, Zehui Tsang, Siuhon Teo, Edwin Hang Tong |
| author_sort | Zhu, Minmin |
| collection | NTU |
| description | High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high and varies largely by three orders of magnitude from ∼103 to 106 Ω μm. Here, we have systematically investigated the effects of gate voltage (VG) and temperature (T) on Rc in the Ti/Gr interface. Besides significant VG dependence, Rc in the n branch is always larger than that in the p branch, indicating a Ti induced n-doping in graphene. In addition, Rc exhibits an anomalous temperature dependence and drops significantly as the temperature decreases, reaching ∼234 Ω μm at 20 K. Such Ti/Gr contact can adjust the Fermi energy of up to 0.15 eV and can also directly form a well-defined sharp p-n junction without extra gates or chemical doping. These findings pave the way to develop the next generation of graphene-based electronic and optoelectronic devices. |
| first_indexed | 2024-10-01T05:40:13Z |
| format | Journal Article |
| id | ntu-10356/82623 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:40:13Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/826232020-09-26T22:18:13Z Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation Zhu, Minmin Wu, Jing Du, Zehui Tsang, Siuhon Teo, Edwin Hang Tong School of Electrical and Electronic Engineering Nanoelectronics Center of Excellence CINTRA CNRS/NTU/THALES Temasek Laboratories P-N Junctions Engineering::Electrical and electronic engineering Graphene High-quality metal-graphene contact is crucial for the fabrication of high-performance graphene transistors. Although Ti has been widely used as metal electrodes in graphene-based devices owing to its excellent adhesive capability, contact resistance (Rc) for Ti/graphene (Ti/Gr) is typically high and varies largely by three orders of magnitude from ∼103 to 106 Ω μm. Here, we have systematically investigated the effects of gate voltage (VG) and temperature (T) on Rc in the Ti/Gr interface. Besides significant VG dependence, Rc in the n branch is always larger than that in the p branch, indicating a Ti induced n-doping in graphene. In addition, Rc exhibits an anomalous temperature dependence and drops significantly as the temperature decreases, reaching ∼234 Ω μm at 20 K. Such Ti/Gr contact can adjust the Fermi energy of up to 0.15 eV and can also directly form a well-defined sharp p-n junction without extra gates or chemical doping. These findings pave the way to develop the next generation of graphene-based electronic and optoelectronic devices. 2019-07-02T04:16:41Z 2019-12-06T14:59:09Z 2019-07-02T04:16:41Z 2019-12-06T14:59:09Z 2018 Journal Article Zhu, M., Wu, J., Du, Z., Tsang, S., & Teo, E. H. T. (2018). Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation. Journal of Applied Physics, 124(21), 215302-. doi:10.1063/1.5052589 0021-8979 https://hdl.handle.net/10356/82623 http://hdl.handle.net/10220/49074 10.1063/1.5052589 en Journal of Applied Physics © 2018 The Author(s). All rights reserved. This paper was published by AIP in Journal of Applied Physics and is made available with permission of The Author(s). 7 p. application/pdf |
| spellingShingle | P-N Junctions Engineering::Electrical and electronic engineering Graphene Zhu, Minmin Wu, Jing Du, Zehui Tsang, Siuhon Teo, Edwin Hang Tong Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation |
| title | Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation |
| title_full | Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation |
| title_fullStr | Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation |
| title_full_unstemmed | Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation |
| title_short | Gate voltage and temperature dependent Ti-graphene junction resistance toward straightforward p-n junction formation |
| title_sort | gate voltage and temperature dependent ti graphene junction resistance toward straightforward p n junction formation |
| topic | P-N Junctions Engineering::Electrical and electronic engineering Graphene |
| url | https://hdl.handle.net/10356/82623 http://hdl.handle.net/10220/49074 |
| work_keys_str_mv | AT zhuminmin gatevoltageandtemperaturedependenttigraphenejunctionresistancetowardstraightforwardpnjunctionformation AT wujing gatevoltageandtemperaturedependenttigraphenejunctionresistancetowardstraightforwardpnjunctionformation AT duzehui gatevoltageandtemperaturedependenttigraphenejunctionresistancetowardstraightforwardpnjunctionformation AT tsangsiuhon gatevoltageandtemperaturedependenttigraphenejunctionresistancetowardstraightforwardpnjunctionformation AT teoedwinhangtong gatevoltageandtemperaturedependenttigraphenejunctionresistancetowardstraightforwardpnjunctionformation |