Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers
Interlayer electronic and mechanical couplings of transitional metal dichalcogenides (TMDs) due to Van der Waals force determine their band structure and Raman modes evolution, respectively. We have synthesized twist-stacked WS2 bilayers with twist angles of 0°, 13°, 30°, 41°, 60°, and 83° via ch...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/82791 http://hdl.handle.net/10220/40340 |
| _version_ | 1826111235627679744 |
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| author | Zheng, Shoujun Sun, Linfeng Zhou, Xiaohao Liu, Fucai Liu, Zheng Shen, Zexiang Fan, Hong Jin |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Zheng, Shoujun Sun, Linfeng Zhou, Xiaohao Liu, Fucai Liu, Zheng Shen, Zexiang Fan, Hong Jin |
| author_sort | Zheng, Shoujun |
| collection | NTU |
| description | Interlayer electronic and mechanical couplings of transitional metal dichalcogenides (TMDs)
due to Van der Waals force determine their band structure and Raman modes evolution,
respectively. We have synthesized twist-stacked WS2 bilayers with twist angles of 0°, 13°, 30°,
41°, 60°, and 83° via chemical-vapor deposited, which allows us to study the coupling effect
by Raman and photoluminescence spectroscopy and density function calculation. The
photoluminescence property implies that these random-twisted WS2 bilayers behave as quasidirect
bandgap material due to weakened interlayer coupling as a result of larger interlayer
distances than the non-twisted 0° and 60° stacked WS2 bilayers (with an indirect band gap). In
addition, an additional small peak (AI) near the excitonic transition peak (A) is observed from
the twisted bilayers, which can be attributed to the interlayer exciton transition. |
| first_indexed | 2024-10-01T02:47:21Z |
| format | Journal Article |
| id | ntu-10356/82791 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:47:21Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/827912023-02-28T19:47:09Z Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers Zheng, Shoujun Sun, Linfeng Zhou, Xiaohao Liu, Fucai Liu, Zheng Shen, Zexiang Fan, Hong Jin School of Materials Science and Engineering School of Physical and Mathematical Sciences Centre for Disruptive Photonic Technologies (CDPT) 2D materials transition metal dichalcogenides interlayer coupling interlayer exciton Interlayer electronic and mechanical couplings of transitional metal dichalcogenides (TMDs) due to Van der Waals force determine their band structure and Raman modes evolution, respectively. We have synthesized twist-stacked WS2 bilayers with twist angles of 0°, 13°, 30°, 41°, 60°, and 83° via chemical-vapor deposited, which allows us to study the coupling effect by Raman and photoluminescence spectroscopy and density function calculation. The photoluminescence property implies that these random-twisted WS2 bilayers behave as quasidirect bandgap material due to weakened interlayer coupling as a result of larger interlayer distances than the non-twisted 0° and 60° stacked WS2 bilayers (with an indirect band gap). In addition, an additional small peak (AI) near the excitonic transition peak (A) is observed from the twisted bilayers, which can be attributed to the interlayer exciton transition. MOE (Min. of Education, S’pore) Accepted version 2016-03-29T09:18:41Z 2019-12-06T15:05:38Z 2016-03-29T09:18:41Z 2019-12-06T15:05:38Z 2015 Journal Article Zheng, S., Sun, L., Zhou, X., Liu, F., Liu, Z., Shen, Z., et al. (2015). Coupling and interlayer exciton in twist-stacked WS2 bilayers. Advanced Optical Materials, 3(11), 1600-1605. https://hdl.handle.net/10356/82791 http://hdl.handle.net/10220/40340 10.1002/adom.201500301 en Advanced Optical Materials © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Optical Materials, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adom.201500301]. 15 p. application/pdf |
| spellingShingle | 2D materials transition metal dichalcogenides interlayer coupling interlayer exciton Zheng, Shoujun Sun, Linfeng Zhou, Xiaohao Liu, Fucai Liu, Zheng Shen, Zexiang Fan, Hong Jin Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers |
| title | Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers |
| title_full | Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers |
| title_fullStr | Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers |
| title_full_unstemmed | Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers |
| title_short | Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers |
| title_sort | coupling and interlayer exciton in twist stacked ws2 bilayers |
| topic | 2D materials transition metal dichalcogenides interlayer coupling interlayer exciton |
| url | https://hdl.handle.net/10356/82791 http://hdl.handle.net/10220/40340 |
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