Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures
In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesi...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/83054 http://hdl.handle.net/10220/50410 |
| _version_ | 1824456342681681920 |
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| author | Zhou, Jiadong Tang, Bijun Lin, Junhao Lv, Danhui Shi, Jia Sun, Linfeng Zeng, Qingsheng Niu, Lin Liu, Fucai Wang, Xiaowei Liu, Xinfeng Suenaga, Kazu Jin, Chuanhong Liu, Zheng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhou, Jiadong Tang, Bijun Lin, Junhao Lv, Danhui Shi, Jia Sun, Linfeng Zeng, Qingsheng Niu, Lin Liu, Fucai Wang, Xiaowei Liu, Xinfeng Suenaga, Kazu Jin, Chuanhong Liu, Zheng |
| author_sort | Zhou, Jiadong |
| collection | NTU |
| description | In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS2 and WS2 domains within the monolayer MoS2‐WS2 lateral heterostructures through controlling the weight ratio of precursors, MoO3 and WO3, as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS2 and MoS2 domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS2 stripe embedded in the MoS2 matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS2‐WS2 lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures. |
| first_indexed | 2025-02-19T03:52:35Z |
| format | Journal Article |
| id | ntu-10356/83054 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:52:35Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/830542023-02-28T19:21:24Z Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures Zhou, Jiadong Tang, Bijun Lin, Junhao Lv, Danhui Shi, Jia Sun, Linfeng Zeng, Qingsheng Niu, Lin Liu, Fucai Wang, Xiaowei Liu, Xinfeng Suenaga, Kazu Jin, Chuanhong Liu, Zheng School of Electrical and Electronic Engineering School of Materials Science & Engineering School of Physical and Mathematical Sciences Engineering::Materials Morphology Engineering MoS2-WS2 Heterostructure In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS2 and WS2 domains within the monolayer MoS2‐WS2 lateral heterostructures through controlling the weight ratio of precursors, MoO3 and WO3, as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS2 and MoS2 domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS2 stripe embedded in the MoS2 matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS2‐WS2 lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2019-11-14T02:27:32Z 2019-12-06T15:10:57Z 2019-11-14T02:27:32Z 2019-12-06T15:10:57Z 2018 Journal Article Zhou, J., Tang, B., Lin, J., Lv, D., Shi, J., Sun, L., … Liu, Z. (2018). Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures. Advanced Functional Materials, 28(31), 1801568-. doi:10.1002/adfm.201801568 1616-301X https://hdl.handle.net/10356/83054 http://hdl.handle.net/10220/50410 10.1002/adfm.201801568 en Advanced Functional Materials This is the peer reviewed version of the following article: Zhou, J., Tang, B., Lin, J., Lv, D., Shi, J., Sun, L., … Liu, Z. (2018). Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures. Advanced Functional Materials, 28(31), 1801568-. doi:10.1002/adfm.201801568, which has been published in final form athttp://dx.doi.org/10.1002/adfm.201801568. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. 21 p. application/pdf |
| spellingShingle | Engineering::Materials Morphology Engineering MoS2-WS2 Heterostructure Zhou, Jiadong Tang, Bijun Lin, Junhao Lv, Danhui Shi, Jia Sun, Linfeng Zeng, Qingsheng Niu, Lin Liu, Fucai Wang, Xiaowei Liu, Xinfeng Suenaga, Kazu Jin, Chuanhong Liu, Zheng Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures |
| title | Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures |
| title_full | Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures |
| title_fullStr | Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures |
| title_full_unstemmed | Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures |
| title_short | Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures |
| title_sort | morphology engineering in monolayer mos2 ws2 lateral heterostructures |
| topic | Engineering::Materials Morphology Engineering MoS2-WS2 Heterostructure |
| url | https://hdl.handle.net/10356/83054 http://hdl.handle.net/10220/50410 |
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