An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage
In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/83147 http://hdl.handle.net/10220/49113 |
| _version_ | 1826116373762277376 |
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| author | Tan, Dexter Xue Ming Pey, Kin Leong Yeong, S. H. Colombeau, B. Poon, C. H. Mok, K. R. C. See, A. Benistant, F. Ng, C. M. Chan, L. Srinivasan, M. P. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Dexter Xue Ming Pey, Kin Leong Yeong, S. H. Colombeau, B. Poon, C. H. Mok, K. R. C. See, A. Benistant, F. Ng, C. M. Chan, L. Srinivasan, M. P. |
| author_sort | Tan, Dexter Xue Ming |
| collection | NTU |
| description | In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has also been observed that the junction stability improves with the increasing number of flash pulses, which is clearly reflected by the dopant deactivation level upon post‐thermal treatment. In another FLA scheme, the spike rapid thermal annealing (RTA) performed prior to the flash further enhances the junction stability. However, this pre‐spike RTA step induces extensive dopant diffusion and an overall degradation in sheet resistance. The above observations are concluded to be due to the different extent of silicon interstitial supersaturation that can be explained by the interactions between the extended defects and dopants. Lastly, leakage current for the junctions formed under different FLA schemes are compared. Typical single pulse FLA junction shows high leakage current and it can be reduced through the additional pulses of FLA or effectively suppressed by the pre‐spike RTA flash scheme. In addition, it is also found that the junction leakage can be correlated to the FLA residual defects. |
| first_indexed | 2024-10-01T04:10:39Z |
| format | Journal Article |
| id | ntu-10356/83147 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:10:39Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/831472020-03-07T13:57:26Z An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage Tan, Dexter Xue Ming Pey, Kin Leong Yeong, S. H. Colombeau, B. Poon, C. H. Mok, K. R. C. See, A. Benistant, F. Ng, C. M. Chan, L. Srinivasan, M. P. School of Electrical and Electronic Engineering ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology Microelectronics Centre Flash Lamp Annealing Boron DRNTU::Engineering::Electrical and electronic engineering In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has also been observed that the junction stability improves with the increasing number of flash pulses, which is clearly reflected by the dopant deactivation level upon post‐thermal treatment. In another FLA scheme, the spike rapid thermal annealing (RTA) performed prior to the flash further enhances the junction stability. However, this pre‐spike RTA step induces extensive dopant diffusion and an overall degradation in sheet resistance. The above observations are concluded to be due to the different extent of silicon interstitial supersaturation that can be explained by the interactions between the extended defects and dopants. Lastly, leakage current for the junctions formed under different FLA schemes are compared. Typical single pulse FLA junction shows high leakage current and it can be reduced through the additional pulses of FLA or effectively suppressed by the pre‐spike RTA flash scheme. In addition, it is also found that the junction leakage can be correlated to the FLA residual defects. Published version 2019-07-03T07:30:16Z 2019-12-06T15:12:44Z 2019-07-03T07:30:16Z 2019-12-06T15:12:44Z 2008 Journal Article Yeong, S. H., Tan, D. X. M., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., . . . Srinivasan, M. P. (2008). An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage. AIP Conference Proceedings, 1066, 47-50. doi:10.1063/1.3033667 0094-243X https://hdl.handle.net/10356/83147 http://hdl.handle.net/10220/49113 10.1063/1.3033667 en AIP Conference Proceedings © 2008 American Institute of Physics. All rights reserved. This paper was published in AIP Conference Proceedings and is made available with permission of American Institute of Physics. 4 p. application/pdf |
| spellingShingle | Flash Lamp Annealing Boron DRNTU::Engineering::Electrical and electronic engineering Tan, Dexter Xue Ming Pey, Kin Leong Yeong, S. H. Colombeau, B. Poon, C. H. Mok, K. R. C. See, A. Benistant, F. Ng, C. M. Chan, L. Srinivasan, M. P. An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage |
| title | An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage |
| title_full | An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage |
| title_fullStr | An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage |
| title_full_unstemmed | An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage |
| title_short | An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage |
| title_sort | extensive study on the boron junctions formed by optimized pre spike multiple pulse flash lamp annealing schemes junction formation stability and leakage |
| topic | Flash Lamp Annealing Boron DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/83147 http://hdl.handle.net/10220/49113 |
| work_keys_str_mv | AT tandexterxueming anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT peykinleong anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT yeongsh anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT colombeaub anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT poonch anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT mokkrc anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT seea anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT benistantf anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT ngcm anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT chanl anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT srinivasanmp anextensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT tandexterxueming extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT peykinleong extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT yeongsh extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT colombeaub extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT poonch extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT mokkrc extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT seea extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT benistantf extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT ngcm extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT chanl extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage AT srinivasanmp extensivestudyontheboronjunctionsformedbyoptimizedprespikemultiplepulseflashlampannealingschemesjunctionformationstabilityandleakage |