An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage

An extensive study on the boron junctions formed by optimized pre-spike∕multiple-pulse flash lamp annealing schemes : junction formation, stability and leakage

In this work, the electrical activation of Boron in Germanium pre‐amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It has...

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Bibliographic Details
Main Authors: Tan, Dexter Xue Ming, Pey, Kin Leong, Yeong, S. H., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., Benistant, F., Ng, C. M., Chan, L., Srinivasan, M. P.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Flash Lamp Annealing
Boron
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/83147
http://hdl.handle.net/10220/49113

Internet

https://hdl.handle.net/10356/83147
http://hdl.handle.net/10220/49113

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