The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects
As in any semiconducting solids, intrinsic defects can affect the properties of ZnO, such as the electrical and thermal conductivities. Defect engineering is usually focused on optimizing the materials’ synthesis or annealing parameters, i.e., temperature, atmosphere, etc. Here we report an approach...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/83393 http://hdl.handle.net/10220/48155 |
| _version_ | 1826114934109372416 |
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| author | Zhu, BeiBei Li, Di Zhang, TianShu Luo, YuBo Donelson, Richard Zhang, Ting Zheng, Yun Du, ChengFeng Wei, Lei Hng, Huey Hoon |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhu, BeiBei Li, Di Zhang, TianShu Luo, YuBo Donelson, Richard Zhang, Ting Zheng, Yun Du, ChengFeng Wei, Lei Hng, Huey Hoon |
| author_sort | Zhu, BeiBei |
| collection | NTU |
| description | As in any semiconducting solids, intrinsic defects can affect the properties of ZnO, such as the electrical and thermal conductivities. Defect engineering is usually focused on optimizing the materials’ synthesis or annealing parameters, i.e., temperature, atmosphere, etc. Here we report an approach to change the intrinsic defects of ZnO by adding a small amount of ZnS. During the sintering process, ZnS was decomposed. Apart from the formation of SO2, the decomposed S and Zn can also be simultaneously doped onto O and Zn sites to change the intrinsic defects in ZnO. For instance, some of the S was converted to SO2 and led to the formation of Vo (oxygen vacancy); meanwhile, Zn may move to the VZn (Zn vacancy) site and decrease the concentration of Zn vacancy. Due to the changes in these native defects, the carrier concentration increased and the thermal conductivity decreased when the content of ZnS was increased to x = 0.01. This sample had an optimal zT value, which was twice that of undoped ZnO. However, with further increase in ZnS, the carrier concentration was reduced. These results suggest a method to tune the intrinsic defects of ZnO via doping technology and bring potential opportunities to improve the thermoelectric performance of this oxide. |
| first_indexed | 2024-10-01T03:47:18Z |
| format | Journal Article |
| id | ntu-10356/83393 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:47:18Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/833932020-06-01T10:13:45Z The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects Zhu, BeiBei Li, Di Zhang, TianShu Luo, YuBo Donelson, Richard Zhang, Ting Zheng, Yun Du, ChengFeng Wei, Lei Hng, Huey Hoon School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Materials ZnO Defects As in any semiconducting solids, intrinsic defects can affect the properties of ZnO, such as the electrical and thermal conductivities. Defect engineering is usually focused on optimizing the materials’ synthesis or annealing parameters, i.e., temperature, atmosphere, etc. Here we report an approach to change the intrinsic defects of ZnO by adding a small amount of ZnS. During the sintering process, ZnS was decomposed. Apart from the formation of SO2, the decomposed S and Zn can also be simultaneously doped onto O and Zn sites to change the intrinsic defects in ZnO. For instance, some of the S was converted to SO2 and led to the formation of Vo (oxygen vacancy); meanwhile, Zn may move to the VZn (Zn vacancy) site and decrease the concentration of Zn vacancy. Due to the changes in these native defects, the carrier concentration increased and the thermal conductivity decreased when the content of ZnS was increased to x = 0.01. This sample had an optimal zT value, which was twice that of undoped ZnO. However, with further increase in ZnS, the carrier concentration was reduced. These results suggest a method to tune the intrinsic defects of ZnO via doping technology and bring potential opportunities to improve the thermoelectric performance of this oxide. MOE (Min. of Education, S’pore) Accepted version 2019-05-10T06:39:49Z 2019-12-06T15:21:29Z 2019-05-10T06:39:49Z 2019-12-06T15:21:29Z 2018 Journal Article Zhu, B., Li, D., Zhang, T., Luo, Y., Donelson, R., Zhang, T., . . . Hng, H. H. (2018). The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects. Ceramics International, 44(6), 6461-6465. doi:10.1016/j.ceramint.2018.01.043 0272-8842 https://hdl.handle.net/10356/83393 http://hdl.handle.net/10220/48155 10.1016/j.ceramint.2018.01.043 en Ceramics International © 2018 Elsevier Ltd and Techna Group S.r.l. (Published by Elsevier). All rights reserved. This paper was published by Elsevier in Ceramics International and is made available with permission of Elsevier Ltd and Techna Group S.r.l. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials ZnO Defects Zhu, BeiBei Li, Di Zhang, TianShu Luo, YuBo Donelson, Richard Zhang, Ting Zheng, Yun Du, ChengFeng Wei, Lei Hng, Huey Hoon The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects |
| title | The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects |
| title_full | The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects |
| title_fullStr | The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects |
| title_full_unstemmed | The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects |
| title_short | The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects |
| title_sort | improvement of thermoelectric property of bulk zno via zns addition influence of intrinsic defects |
| topic | DRNTU::Engineering::Materials ZnO Defects |
| url | https://hdl.handle.net/10356/83393 http://hdl.handle.net/10220/48155 |
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