Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using ato...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों:	Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
अन्य लेखक:	School of Electrical and Electronic Engineering
स्वरूप:	Journal Article
भाषा:	English
प्रकाशित:	2017
विषय:	Carrier mobility III-V semiconductors
ऑनलाइन पहुंच:	https://hdl.handle.net/10356/83623 http://hdl.handle.net/10220/42691

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