Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy
Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scala...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2017
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| Online Access: | https://hdl.handle.net/10356/83938 http://hdl.handle.net/10220/42879 |
| _version_ | 1811678759811547136 |
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| author | Tay, Roland Yingjie Lin, Jinjun Tsang, Siu Hon McCulloch, Dougal G. Teo, Edwin Hang Tong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tay, Roland Yingjie Lin, Jinjun Tsang, Siu Hon McCulloch, Dougal G. Teo, Edwin Hang Tong |
| author_sort | Tay, Roland Yingjie |
| collection | NTU |
| description | Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scalability for enabling its practical utilization. When probing the growth behaviors and structural characteristics of h-BN, the use of appropriate characterization techniques is important. In this review, we detail the use of scanning and transmission electron microscopies to investigate the atomic configurations of monolayer and bilayer h-BN grown via chemical vapor deposition. These advanced microscopy techniques have been demonstrated to provide intimate insights to the atomic structures of h-BN, which can be interpreted directly or indirectly using known growth mechanisms and existing theoretical calculations. This review provides a collective understanding of the structural characteristics and defects of synthetic h-BN films and facilitates a better perspective toward the development of new and improved synthesis techniques. |
| first_indexed | 2024-10-01T02:58:22Z |
| format | Journal Article |
| id | ntu-10356/83938 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:58:22Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/839382020-09-26T22:16:40Z Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy Tay, Roland Yingjie Lin, Jinjun Tsang, Siu Hon McCulloch, Dougal G. Teo, Edwin Hang Tong School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories Hexagonal boron nitride Monolayer Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scalability for enabling its practical utilization. When probing the growth behaviors and structural characteristics of h-BN, the use of appropriate characterization techniques is important. In this review, we detail the use of scanning and transmission electron microscopies to investigate the atomic configurations of monolayer and bilayer h-BN grown via chemical vapor deposition. These advanced microscopy techniques have been demonstrated to provide intimate insights to the atomic structures of h-BN, which can be interpreted directly or indirectly using known growth mechanisms and existing theoretical calculations. This review provides a collective understanding of the structural characteristics and defects of synthetic h-BN films and facilitates a better perspective toward the development of new and improved synthesis techniques. ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Published version 2017-07-17T05:09:46Z 2019-12-06T15:34:57Z 2017-07-17T05:09:46Z 2019-12-06T15:34:57Z 2016 Journal Article Tay, R. Y., Lin, J., Tsang, S. H., McCulloch, D. G., & Teo, E. H. T. (2016). Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy. Applied Microscopy, 46(4), 217-226. 2287-5123 https://hdl.handle.net/10356/83938 http://hdl.handle.net/10220/42879 10.9729/AM.2016.46.4.217 en Applied Microscopy © 2016 Korean Society of Microscopy. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. 10 p. application/pdf |
| spellingShingle | Hexagonal boron nitride Monolayer Tay, Roland Yingjie Lin, Jinjun Tsang, Siu Hon McCulloch, Dougal G. Teo, Edwin Hang Tong Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy |
| title | Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy |
| title_full | Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy |
| title_fullStr | Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy |
| title_full_unstemmed | Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy |
| title_short | Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy |
| title_sort | probing the atomic structures of synthetic monolayer and bilayer hexagonal boron nitride using electron microscopy |
| topic | Hexagonal boron nitride Monolayer |
| url | https://hdl.handle.net/10356/83938 http://hdl.handle.net/10220/42879 |
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