Area-efficient and low stand-by power 1k-byte transmission-gate-based non-imprinting high-speed erase (TNIHE) SRAM
We propose a novel 15-T Transmission-gate-based Non-Imprinting High-speed Erase (TNIHE) SRAM cell with emphases on low area overhead and low stand-by power attributes for highly secured data storage applications. We benchmark our proposed 15-T TNIHE SRAM cell against the reported 22-T Non-Imprinting...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/83999 http://hdl.handle.net/10220/41565 |