Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells
Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion l...
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Формат: | Journal Article |
Мова: | English |
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2017
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Онлайн доступ: | https://hdl.handle.net/10356/84069 http://hdl.handle.net/10220/43555 |
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author | Wu, Bo Zhou, Yuanyuan Xing, Guichuan Xu, Qiang Garces, Hector F. Solanki, Ankur Goh, Teck Wee Padture, Nitin P. Sum, Tze Chien |
author2 | School of Physical and Mathematical Sciences |
author_facet | School of Physical and Mathematical Sciences Wu, Bo Zhou, Yuanyuan Xing, Guichuan Xu, Qiang Garces, Hector F. Solanki, Ankur Goh, Teck Wee Padture, Nitin P. Sum, Tze Chien |
author_sort | Wu, Bo |
collection | NTU |
description | Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion lengths (<30 nm) and two orders of magnitude higher defect densities) than Pb-based systems. Herein, it is revealed that melt-synthesized cesium tin iodide (CsSnI3) ingots containing high-quality large single crystal (SC) grains transcend these fundamental limitations. |
first_indexed | 2024-10-01T06:58:43Z |
format | Journal Article |
id | ntu-10356/84069 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T06:58:43Z |
publishDate | 2017 |
record_format | dspace |
spelling | ntu-10356/840692023-02-28T19:41:15Z Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells Wu, Bo Zhou, Yuanyuan Xing, Guichuan Xu, Qiang Garces, Hector F. Solanki, Ankur Goh, Teck Wee Padture, Nitin P. Sum, Tze Chien School of Physical and Mathematical Sciences Carrier dynamics Lead-free perovskite crystal Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion lengths (<30 nm) and two orders of magnitude higher defect densities) than Pb-based systems. Herein, it is revealed that melt-synthesized cesium tin iodide (CsSnI3) ingots containing high-quality large single crystal (SC) grains transcend these fundamental limitations. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2017-08-07T03:19:20Z 2019-12-06T15:37:40Z 2017-08-07T03:19:20Z 2019-12-06T15:37:40Z 2017 Journal Article Wu, B., Zhou, Y., Xing, G., Xu, Q., Garces, H. F., Solanki, A., et al. (2017). Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells. Advanced Functional Materials, 27(7), 1604818-. 1616-301X https://hdl.handle.net/10356/84069 http://hdl.handle.net/10220/43555 10.1002/adfm.201604818 en Advanced Functional Materials © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Functional Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adfm.201604818]. 30 p. application/pdf |
spellingShingle | Carrier dynamics Lead-free perovskite crystal Wu, Bo Zhou, Yuanyuan Xing, Guichuan Xu, Qiang Garces, Hector F. Solanki, Ankur Goh, Teck Wee Padture, Nitin P. Sum, Tze Chien Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells |
title | Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells |
title_full | Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells |
title_fullStr | Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells |
title_full_unstemmed | Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells |
title_short | Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells |
title_sort | long minority carrier diffusion length and low surface recombination velocity in inorganic lead free cssni3 perovskite crystal for solar cells |
topic | Carrier dynamics Lead-free perovskite crystal |
url | https://hdl.handle.net/10356/84069 http://hdl.handle.net/10220/43555 |
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