Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of the most promising candidates for next-generation non-volatile memory. STT-MRAM was seen as a potential candidate to replace complementary metal oxide semiconductor (CMOS)-based memory in the field of...
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| Other Authors: | |
| Format: | Student Research Poster |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/84141 http://hdl.handle.net/10220/41618 |
| _version_ | 1811682244679434240 |
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| author | Loy, Desmond Jia Jun |
| author2 | Lew Wen Siang |
| author_facet | Lew Wen Siang Loy, Desmond Jia Jun |
| author_sort | Loy, Desmond Jia Jun |
| collection | NTU |
| description | In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of the most promising candidates for next-generation non-volatile memory. STT-MRAM was seen as a potential candidate to replace complementary metal oxide semiconductor (CMOS)-based memory in the field of logic-in-memory. However, STT-MRAM also faces challenges such as high energy consumption and weakened reliability due to a common access path for both read and write operations. This compels the search for a new spintronic concept known as spin orbit torque (SOT)-MRAM. The core of a MRAM is the magnetic tunnel junction (MTJ) cell. A SOT-MTJ is a three-terminal device which has its read and write paths isolated, and it consist of better overall properties as compared to an STT-MTJ, making SOT-MTJ a suitable novel paradigm for logic applications. In this work, we demonstrate a prototype SOT-based MTJ SR-latch circuit which has faster switching time and shorter energy delay as compared to conventional semiconductor counterparts. [2nd Award] |
| first_indexed | 2024-10-01T03:53:46Z |
| format | Student Research Poster |
| id | ntu-10356/84141 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:53:46Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/841412020-09-27T20:28:12Z Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry Loy, Desmond Jia Jun Lew Wen Siang School of Physical and Mathematical Sciences In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of the most promising candidates for next-generation non-volatile memory. STT-MRAM was seen as a potential candidate to replace complementary metal oxide semiconductor (CMOS)-based memory in the field of logic-in-memory. However, STT-MRAM also faces challenges such as high energy consumption and weakened reliability due to a common access path for both read and write operations. This compels the search for a new spintronic concept known as spin orbit torque (SOT)-MRAM. The core of a MRAM is the magnetic tunnel junction (MTJ) cell. A SOT-MTJ is a three-terminal device which has its read and write paths isolated, and it consist of better overall properties as compared to an STT-MTJ, making SOT-MTJ a suitable novel paradigm for logic applications. In this work, we demonstrate a prototype SOT-based MTJ SR-latch circuit which has faster switching time and shorter energy delay as compared to conventional semiconductor counterparts. [2nd Award] 2016-11-02T09:15:19Z 2019-12-06T15:39:11Z 2016-11-02T09:15:19Z 2019-12-06T15:39:11Z 2016 Student Research Poster Loy, D. J. J. (2016, March). Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry. Presented at Discover URECA @ NTU poster exhibition and competition, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/84141 http://hdl.handle.net/10220/41618 en © 2016 The Author(s). application/pdf |
| spellingShingle | Loy, Desmond Jia Jun Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry |
| title | Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry |
| title_full | Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry |
| title_fullStr | Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry |
| title_full_unstemmed | Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry |
| title_short | Flip-Flop SR Latch Logic Operation for Spin Orbit Torque-Magnetic Tunnel Junction Circuitry |
| title_sort | flip flop sr latch logic operation for spin orbit torque magnetic tunnel junction circuitry |
| url | https://hdl.handle.net/10356/84141 http://hdl.handle.net/10220/41618 |
| work_keys_str_mv | AT loydesmondjiajun flipflopsrlatchlogicoperationforspinorbittorquemagnetictunneljunctioncircuitry |