Additive Manufacturing of ZnO Thin Film for Micro Size UV Photodetector
Due to its large bandgap (3.37eV), ZnO is a suitable candidate for sensing material of UV photodetectors with great selectivity to wavelength with high radiation energy. ZnO thin film has been deposited by many methods. However, ZnO thin film created by these techniques, which is compatible with MEM...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/84530 http://hdl.handle.net/10220/41817 |
| Summary: | Due to its large bandgap (3.37eV), ZnO is a suitable candidate for sensing material of UV photodetectors with great selectivity to wavelength with high radiation energy. ZnO thin film has been deposited by many methods. However, ZnO thin film created by these techniques, which is compatible with MEMS process, requires the clean-room facilities and photolithography process to remove excessive part of material and form required patterns. In this work, we prepared a solution of Zinc acetate precursor with a simple recipe for additive manufacturing of ZnO thin film. We demonstrated the fully additive manufacturing of photodetector with fast response, less than 0.5 seconds, to UV illumination at a low bias voltage. The all-step additive manufacturing process introduces a highly cost-effective method for fabrication of UV photodetectors. The as-prepared solution may be used for inkjet printing of devices. |
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