Group-velocity-controlled and gate-tunable directional excitation of polaritons in graphene-boron nitride heterostructures
A fundamental building block in nano‐photonics is the ability to directionally excite highly squeezed optical mode dynamically, particularly with an electrical bias. Such capabilities would enable the active manipulation of light propagation for information processing and transfer. However, when the...
Автори: | Jiang, Yuyu, Lin, Xiao, Low, Tony, Zhang, Baile, Chen, Hongsheng |
---|---|
Інші автори: | School of Physical and Mathematical Sciences |
Формат: | Journal Article |
Мова: | English |
Опубліковано: |
2019
|
Предмети: | |
Онлайн доступ: | https://hdl.handle.net/10356/84565 http://hdl.handle.net/10220/50422 |
Схожі ресурси
Схожі ресурси
-
Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior
за авторством: Boyuan Yu, та інші
Опубліковано: (2025-01-01) -
High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility
за авторством: Siyu Zhou, та інші
Опубліковано: (2022-10-01) -
Hexagonal boron nitride: optical properties in the deep ultraviolet
за авторством: Cassabois, Guillaume, та інші
Опубліковано: (2021-06-01) -
Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle
за авторством: Teppei Shintaku, та інші
Опубліковано: (2024-01-01) -
Large Area Few-Layer Hexagonal Boron Nitride as a Raman Enhancement Material
за авторством: Nilanjan Basu, та інші
Опубліковано: (2021-03-01)