Silicon carbide based inverters for energy efficiency
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters....
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/84656 http://hdl.handle.net/10220/12157 |
| _version_ | 1811691450716389376 |
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| author | Vu, P. L. A. Rahman, M. A. Maswood, Ali I. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Vu, P. L. A. Rahman, M. A. Maswood, Ali I. |
| author_sort | Vu, P. L. A. |
| collection | NTU |
| description | The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters. Output characteristics and switching energy loss characteristics based on experimental data are incorporated. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide based inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based IGBT inverters. This is most so at high switching frequency. |
| first_indexed | 2024-10-01T06:20:05Z |
| format | Conference Paper |
| id | ntu-10356/84656 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:20:05Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/846562020-03-07T13:24:45Z Silicon carbide based inverters for energy efficiency Vu, P. L. A. Rahman, M. A. Maswood, Ali I. School of Electrical and Electronic Engineering IEEE Transportation Electrification Conference and Expo (2012 : Dearborn, US) DRNTU::Engineering::Electrical and electronic engineering The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper gives an assessment of the silicon carbide power modules in power inverters. Output characteristics and switching energy loss characteristics based on experimental data are incorporated. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide based inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based IGBT inverters. This is most so at high switching frequency. 2013-07-25T02:47:07Z 2019-12-06T15:48:59Z 2013-07-25T02:47:07Z 2019-12-06T15:48:59Z 2012 2012 Conference Paper Maswood, A. I., Vu, P. L. A., & Rahman, M. A. (2012). Silicon carbide based inverters for energy efficiency. 2012 IEEE Transportation Electrification Conference and Expo (ITEC). https://hdl.handle.net/10356/84656 http://hdl.handle.net/10220/12157 10.1109/ITEC.2012.6243458 en © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Vu, P. L. A. Rahman, M. A. Maswood, Ali I. Silicon carbide based inverters for energy efficiency |
| title | Silicon carbide based inverters for energy efficiency |
| title_full | Silicon carbide based inverters for energy efficiency |
| title_fullStr | Silicon carbide based inverters for energy efficiency |
| title_full_unstemmed | Silicon carbide based inverters for energy efficiency |
| title_short | Silicon carbide based inverters for energy efficiency |
| title_sort | silicon carbide based inverters for energy efficiency |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/84656 http://hdl.handle.net/10220/12157 |
| work_keys_str_mv | AT vupla siliconcarbidebasedinvertersforenergyefficiency AT rahmanma siliconcarbidebasedinvertersforenergyefficiency AT maswoodalii siliconcarbidebasedinvertersforenergyefficiency |