Local current measurements for avalanche breakdown in Silicon p-n junctions
Application of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a linear dependence between emission intensity and biasing current. However, inconclusive understanding of photon emission phenomena in Silicon stopped the research community form applying PEM for local cur...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/84747 http://hdl.handle.net/10220/12362 |
| _version_ | 1826119322926317568 |
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| author | Poenar, Daniel P. Ding, Y. Isakov, D. V. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Poenar, Daniel P. Ding, Y. Isakov, D. V. |
| author_sort | Poenar, Daniel P. |
| collection | NTU |
| description | Application of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a linear dependence between emission intensity and biasing current. However, inconclusive understanding of photon emission phenomena in Silicon stopped the research community form applying PEM for local current estimation. In this paper we show for the first time that the linear relationship is valid for avalanche breakdown in the range of currents across five orders of magnitude. And we conclude that the observed relationship is independent of non-radiative effects. Using the observed photon emission pattern we perform a detailed analysis of the influence of the junction geometry and doping topology on the breakdown phenomenon. We also for the first time estimate the local I-V curves in the junction and demonstrate the complexity of the breakdown phenomenon. Our results also demonstrate a poor applicability of global I-V curve measurements for calibration of existing TCAD models. |
| first_indexed | 2024-10-01T04:58:02Z |
| format | Conference Paper |
| id | ntu-10356/84747 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:58:02Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/847472020-03-07T13:24:45Z Local current measurements for avalanche breakdown in Silicon p-n junctions Poenar, Daniel P. Ding, Y. Isakov, D. V. School of Electrical and Electronic Engineering IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore) A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering Application of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a linear dependence between emission intensity and biasing current. However, inconclusive understanding of photon emission phenomena in Silicon stopped the research community form applying PEM for local current estimation. In this paper we show for the first time that the linear relationship is valid for avalanche breakdown in the range of currents across five orders of magnitude. And we conclude that the observed relationship is independent of non-radiative effects. Using the observed photon emission pattern we perform a detailed analysis of the influence of the junction geometry and doping topology on the breakdown phenomenon. We also for the first time estimate the local I-V curves in the junction and demonstrate the complexity of the breakdown phenomenon. Our results also demonstrate a poor applicability of global I-V curve measurements for calibration of existing TCAD models. 2013-07-26T03:37:03Z 2019-12-06T15:50:41Z 2013-07-26T03:37:03Z 2019-12-06T15:50:41Z 2012 2012 Conference Paper Ding, Y., Poenar, D. P., & Isakov, D. V. (2012). Local current measurements for avalanche breakdown in Silicon p-n junctions. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. https://hdl.handle.net/10356/84747 http://hdl.handle.net/10220/12362 10.1109/IPFA.2012.6306254 en © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Poenar, Daniel P. Ding, Y. Isakov, D. V. Local current measurements for avalanche breakdown in Silicon p-n junctions |
| title | Local current measurements for avalanche breakdown in Silicon p-n junctions |
| title_full | Local current measurements for avalanche breakdown in Silicon p-n junctions |
| title_fullStr | Local current measurements for avalanche breakdown in Silicon p-n junctions |
| title_full_unstemmed | Local current measurements for avalanche breakdown in Silicon p-n junctions |
| title_short | Local current measurements for avalanche breakdown in Silicon p-n junctions |
| title_sort | local current measurements for avalanche breakdown in silicon p n junctions |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/84747 http://hdl.handle.net/10220/12362 |
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