Local current measurements for avalanche breakdown in Silicon p-n junctions

Local current measurements for avalanche breakdown in Silicon p-n junctions

Application of Photon Emission Microscopy (PEM) in semiconductor characterization often shows a linear dependence between emission intensity and biasing current. However, inconclusive understanding of photon emission phenomena in Silicon stopped the research community form applying PEM for local cur...

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Bibliographic Details
Main Authors: Poenar, Daniel P., Ding, Y., Isakov, D. V.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/84747
http://hdl.handle.net/10220/12362

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