Utilizing reverse short-channel effect for optimal subthreshold circuit design
The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current o...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/84783 http://hdl.handle.net/10220/6341 |