Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement

Impact ionization coefficients in 4H-SiC by ultralow excess noise measurement

Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 μm , respectively. Pure in...

Full description

Bibliographic Details
Main Authors: Green, James E., Loh, Wei Sun., Marshall, Andrew R. J., Ng, Beng Koon, Tozer, Richard C., David, John P. R., Soloviev, Stanislav I., Sandvik, Peter M.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/84793
http://hdl.handle.net/10220/13475

Internet

https://hdl.handle.net/10356/84793
http://hdl.handle.net/10220/13475

Similar Items