On the hole accelerator for III-nitride light-emitting diodes
In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN co...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
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| Online Access: | https://hdl.handle.net/10356/84934 http://hdl.handle.net/10220/40836 |
| _version_ | 1824453723288502272 |
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| author | Zhang, Zi-Hui Zhang, Yonghui Bi, Wengang Geng, Chong Xu, Shu Demir, Hilmi Volkan Sun, Xiao Wei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Zi-Hui Zhang, Yonghui Bi, Wengang Geng, Chong Xu, Shu Demir, Hilmi Volkan Sun, Xiao Wei |
| author_sort | Zhang, Zi-Hui |
| collection | NTU |
| description | In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1−xN layer, and the thickness for the p-GaN layer and the p-AlxGa1−xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1−xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1−xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1−xN design, and the hole accelerator can effectively increase the hole injection if properly designed. |
| first_indexed | 2025-02-19T03:10:57Z |
| format | Journal Article |
| id | ntu-10356/84934 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:10:57Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/849342020-03-07T13:57:21Z On the hole accelerator for III-nitride light-emitting diodes Zhang, Zi-Hui Zhang, Yonghui Bi, Wengang Geng, Chong Xu, Shu Demir, Hilmi Volkan Sun, Xiao Wei School of Electrical and Electronic Engineering LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays Electric fields Polarization In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1−xN layer, and the thickness for the p-GaN layer and the p-AlxGa1−xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1−xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1−xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1−xN design, and the hole accelerator can effectively increase the hole injection if properly designed. Published version 2016-06-29T05:14:23Z 2019-12-06T15:53:55Z 2016-06-29T05:14:23Z 2019-12-06T15:53:55Z 2016 Journal Article Zhang, Z. H., Zhang, Y., Bi, W., Geng, C., Xu, S., Demir, H. V., et al. (2016). On the hole accelerator for III-nitride light-emitting diodes. Applied Physics Letters, 108(15), 151105-. 0003-6951 https://hdl.handle.net/10356/84934 http://hdl.handle.net/10220/40836 10.1063/1.4947025 en Applied Physics Letters © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4947025]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | Electric fields Polarization Zhang, Zi-Hui Zhang, Yonghui Bi, Wengang Geng, Chong Xu, Shu Demir, Hilmi Volkan Sun, Xiao Wei On the hole accelerator for III-nitride light-emitting diodes |
| title | On the hole accelerator for III-nitride light-emitting diodes |
| title_full | On the hole accelerator for III-nitride light-emitting diodes |
| title_fullStr | On the hole accelerator for III-nitride light-emitting diodes |
| title_full_unstemmed | On the hole accelerator for III-nitride light-emitting diodes |
| title_short | On the hole accelerator for III-nitride light-emitting diodes |
| title_sort | on the hole accelerator for iii nitride light emitting diodes |
| topic | Electric fields Polarization |
| url | https://hdl.handle.net/10356/84934 http://hdl.handle.net/10220/40836 |
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