Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/85259 http://hdl.handle.net/10220/12363 |
| _version_ | 1826127838772723712 |
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| author | Gan, C. L. Tan, T. L. Ong, R. X. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Gan, C. L. Tan, T. L. Ong, R. X. |
| author_sort | Gan, C. L. |
| collection | NTU |
| description | Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime. |
| first_indexed | 2024-10-01T07:15:01Z |
| format | Conference Paper |
| id | ntu-10356/85259 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:15:01Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/852592020-06-01T10:13:44Z Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures Gan, C. L. Tan, T. L. Ong, R. X. School of Materials Science & Engineering International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore) Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb structure. It was found that the lifetime extracted from finger tests structures does not scale to comb structure by the Poisson area scaling law. Discrepancy is believed to have arisen due to the difference in field enhancement caused by the difference in shapes. Finite element modelling (FEM) simulation was performed using physical images to affirm this field enhancement effect. Finger test structure was found to suffer from a higher field enhancement compared to the comb structure, hence supporting the experimental results where extrapolation of lifetime from comb structure to small area over-estimates the lifetime. 2013-07-26T03:45:03Z 2019-12-06T16:00:31Z 2013-07-26T03:45:03Z 2019-12-06T16:00:31Z 2012 2012 Conference Paper Ong, R. X., Tan, T. L., & Gan, C. L. (2012). Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). https://hdl.handle.net/10356/85259 http://hdl.handle.net/10220/12363 10.1109/IPFA.2012.6306255 en © 2012 IEEE. |
| spellingShingle | Gan, C. L. Tan, T. L. Ong, R. X. Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures |
| title | Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures |
| title_full | Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures |
| title_fullStr | Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures |
| title_full_unstemmed | Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures |
| title_short | Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures |
| title_sort | impact of field enhancement on tddb lifetimes of cu low k test structures |
| url | https://hdl.handle.net/10356/85259 http://hdl.handle.net/10220/12363 |
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