Impact of field enhancement on TDDB lifetimes of Cu/Low-k test structures
Small area finger test structures were designed to isolate and study the physical failure analysis of Cu/low-k system. This paper aims to study the impact of field enhancement and area scaling through the comparison of dielectric breakdown lifetime of the finger test structures and conventional comb...
Main Authors: | Gan, C. L., Tan, T. L., Ong, R. X. |
---|---|
Other Authors: | School of Materials Science & Engineering |
Format: | Conference Paper |
Language: | English |
Published: |
2013
|
Online Access: | https://hdl.handle.net/10356/85259 http://hdl.handle.net/10220/12363 |
Similar Items
-
Investigation of interconnect layout on CU/Low-K TDDB reliability
by: Ong, Ran Xing
Published: (2015) -
The link between NBTI and TDDB of high-k gate P-MOSFETs
by: Gao, Yuan, et al.
Published: (2013) -
Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
by: Yew, K. S., et al.
Published: (2013) -
Fine pitch packaging study of CU or low-k devices
by: Ong, Xuefen.
Published: (2009) -
A measurement of the K-S lifetime
by: Lai, A, et al.
Published: (2002)