Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures
Over the past decade, graphene and other 2D materials have attracted much attention in both fundamental studies and potential applications due to their extraordinary properties. In particular, heterostructures based on these van der Waals (vdW) materials have become one of the leading hot topics in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/85305 http://hdl.handle.net/10220/49203 |
| _version_ | 1826129783414587392 |
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| author | Zeng, Qingsheng Liu, Zheng |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Zeng, Qingsheng Liu, Zheng |
| author_sort | Zeng, Qingsheng |
| collection | NTU |
| description | Over the past decade, graphene and other 2D materials have attracted much attention in both fundamental studies and potential applications due to their extraordinary properties. In particular, heterostructures based on these van der Waals (vdW) materials have become one of the leading hot topics in the electronic and optoelectronic field. As representative photoactive 2D materials, transition metal dichalcogenides (TMDs) play a critical role in the creation of 2D optoelectronic heterojunctions themselves or in combination with other 2D materials. Here, the optoelectronics of three types of TMD‐based 2D heterostructures are reviewed: (1) heterostructures between different TMDs, including vertical vdW heterojunctions fabricated by mechanical transfer and direct synthesis, and lateral in‐plane heterostructures formed via epitaxial growth; (2) heterostructures between TMDs and graphene built by stacking, vdW epitaxy, and lateral assembly; (3) heterostructures between TMDs and other novel 2D materials, such as black phosphorus and GaTe. The operation mechanism of all these optoelectronic devices is discussed. |
| first_indexed | 2024-10-01T07:46:11Z |
| format | Journal Article |
| id | ntu-10356/85305 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:46:11Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/853052020-06-01T10:21:12Z Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures Zeng, Qingsheng Liu, Zheng School of Materials Science & Engineering CINTRA CNRS/NTU/THALES Nanoelectronics Center of Excellence Centre for Programmable Materials Engineering::Materials Optoelectronics 2D Heterostructures Over the past decade, graphene and other 2D materials have attracted much attention in both fundamental studies and potential applications due to their extraordinary properties. In particular, heterostructures based on these van der Waals (vdW) materials have become one of the leading hot topics in the electronic and optoelectronic field. As representative photoactive 2D materials, transition metal dichalcogenides (TMDs) play a critical role in the creation of 2D optoelectronic heterojunctions themselves or in combination with other 2D materials. Here, the optoelectronics of three types of TMD‐based 2D heterostructures are reviewed: (1) heterostructures between different TMDs, including vertical vdW heterojunctions fabricated by mechanical transfer and direct synthesis, and lateral in‐plane heterostructures formed via epitaxial growth; (2) heterostructures between TMDs and graphene built by stacking, vdW epitaxy, and lateral assembly; (3) heterostructures between TMDs and other novel 2D materials, such as black phosphorus and GaTe. The operation mechanism of all these optoelectronic devices is discussed. NRF (Natl Research Foundation, S’pore) 2019-07-09T05:00:24Z 2019-12-06T16:01:09Z 2019-07-09T05:00:24Z 2019-12-06T16:01:09Z 2018 Journal Article Zeng, Q., & Liu, Z. (2018). Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures. Advanced Electronic Materials, 4(2), 1700335-. doi:10.1002/aelm.201700335 https://hdl.handle.net/10356/85305 http://hdl.handle.net/10220/49203 10.1002/aelm.201700335 en Advanced Electronic Materials © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. |
| spellingShingle | Engineering::Materials Optoelectronics 2D Heterostructures Zeng, Qingsheng Liu, Zheng Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures |
| title | Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures |
| title_full | Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures |
| title_fullStr | Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures |
| title_full_unstemmed | Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures |
| title_short | Novel optoelectronic devices : transition‐metal‐dichalcogenide‐based 2D heterostructures |
| title_sort | novel optoelectronic devices transition metal dichalcogenide based 2d heterostructures |
| topic | Engineering::Materials Optoelectronics 2D Heterostructures |
| url | https://hdl.handle.net/10356/85305 http://hdl.handle.net/10220/49203 |
| work_keys_str_mv | AT zengqingsheng noveloptoelectronicdevicestransitionmetaldichalcogenidebased2dheterostructures AT liuzheng noveloptoelectronicdevicestransitionmetaldichalcogenidebased2dheterostructures |