High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser
A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up to 80 °C, and passive mode locking operation with a fundamental repetition frequency of ∼18.4 GHz is observed up to 60 °C. T...
| Главные авторы: | , , , , , , , , , , |
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| Формат: | Journal Article |
| Язык: | English |
| Опубликовано: |
2019
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| Предметы: | |
| Online-ссылка: | https://hdl.handle.net/10356/85307 http://hdl.handle.net/10220/49198 |
| _version_ | 1826117026064629760 |
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| author | Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Liu, Chongyang Sia, Brian Jia Xu |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Liu, Chongyang Sia, Brian Jia Xu |
| author_sort | Li, Xiang |
| collection | NTU |
| description | A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up to 80 °C, and passive mode locking operation with a fundamental repetition frequency of ∼18.4 GHz is observed up to 60 °C. The laser has a characteristic temperature T0 of ∼88 K near room temperature, which is only slightly affected by the absorber bias voltage (Va). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (Ig) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30 MHz when the temperature is raised from 20 to 40 °C. Frequency tuning of ∼130 and ∼60 MHz was observed at 20 and 40 °C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature. |
| first_indexed | 2024-10-01T04:21:01Z |
| format | Journal Article |
| id | ntu-10356/85307 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:21:01Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/853072020-03-07T13:57:27Z High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Liu, Chongyang Sia, Brian Jia Xu School of Electrical and Electronic Engineering Temasek Laboratories Semiconductor Lasers Quantum Wells Engineering::Electrical and electronic engineering A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2 μm is demonstrated. The laser is able to lase in the continuous wave mode up to 80 °C, and passive mode locking operation with a fundamental repetition frequency of ∼18.4 GHz is observed up to 60 °C. The laser has a characteristic temperature T0 of ∼88 K near room temperature, which is only slightly affected by the absorber bias voltage (Va). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (Ig) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30 MHz when the temperature is raised from 20 to 40 °C. Frequency tuning of ∼130 and ∼60 MHz was observed at 20 and 40 °C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature. NRF (Natl Research Foundation, S’pore) Published version 2019-07-09T04:24:04Z 2019-12-06T16:01:11Z 2019-07-09T04:24:04Z 2019-12-06T16:01:11Z 2019 Journal Article Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Sia, B. J. X., . . . Liu, C. (2019). High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser. Applied Physics Letters, 114(22), 221104-. doi:10.1063/1.5096447 0003-6951 https://hdl.handle.net/10356/85307 http://hdl.handle.net/10220/49198 10.1063/1.5096447 en Applied Physics Letters © 2019 The Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of The Author(s). 4 p. application/pdf |
| spellingShingle | Semiconductor Lasers Quantum Wells Engineering::Electrical and electronic engineering Li, Xiang Wang, Hong Qiao, Zhongliang Guo, Xin Wang, Wanjun Ng, Geok Ing Zhang, Yu Niu, Zhichuan Tong, Cunzhu Liu, Chongyang Sia, Brian Jia Xu High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser |
| title | High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser |
| title_full | High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser |
| title_fullStr | High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser |
| title_full_unstemmed | High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser |
| title_short | High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser |
| title_sort | high temperature characteristics of a 2 μm ingasb algaassb passively mode locked quantum well laser |
| topic | Semiconductor Lasers Quantum Wells Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/85307 http://hdl.handle.net/10220/49198 |
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