Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer
Adopting proper electron transport layers (ETLs) is essential to high‐performance all‐inorganic perovskite light‐emitting diodes (PeLEDs). However, the effect of ETLs has not been comprehensively investigated in all‐inorganic nanocrystal PeLEDs, while 2,2′,2′′‐(1,3,5‐benzenetriyl) tris‐[1‐phenyl‐1H‐...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/85459 http://hdl.handle.net/10220/49221 |
| _version_ | 1826113800355446784 |
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| author | Liu, Baiquan Wang, Lin Gu, Haoshuang Sun, Handong Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liu, Baiquan Wang, Lin Gu, Haoshuang Sun, Handong Demir, Hilmi Volkan |
| author_sort | Liu, Baiquan |
| collection | NTU |
| description | Adopting proper electron transport layers (ETLs) is essential to high‐performance all‐inorganic perovskite light‐emitting diodes (PeLEDs). However, the effect of ETLs has not been comprehensively investigated in all‐inorganic nanocrystal PeLEDs, while 2,2′,2′′‐(1,3,5‐benzenetriyl) tris‐[1‐phenyl‐1H‐benzimidazole] (TPBi) is the most common ETL. Herein, a novel strategy is proposed to enhance the efficiency of nanocrystal PeLEDs. Tris(8‐hydroxyquinoline) aluminum (Alq3) is incorporated into TPBi to form a new ETL TPBi/Alq3/TPBi, simultaneously enabling charge balance and confinement. The green PeLED with new ETL exhibits a maximum external quantum efficiency (EQE) of 1.43%, current efficiency of 4.69 cd A−1, and power efficiency of 1.84 lm W−1, which are 191%, 192%, and 211% higher than those of PeLEDs with conventional ETL TPBi, respectively. Significantly, the EQE is 36‐fold higher than that of PeLED with high electron mobility ETL. Impressively, the full width at half‐maximum of electroluminescence emission is 16 nm, which is the narrowest among CsPbBr3 PeLEDs. The findings may present a rational strategy to enhance the device engineering of all‐inorganic PeLEDs. |
| first_indexed | 2024-10-01T03:28:48Z |
| format | Journal Article |
| id | ntu-10356/85459 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:28:48Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/854592020-03-07T13:57:27Z Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer Liu, Baiquan Wang, Lin Gu, Haoshuang Sun, Handong Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Centre of Excellence for Semiconductor Lighting and Displays Centre for Disruptive Photonic Technologies Light‐emitting Diodes Electron Transport Layer Engineering::Electrical and electronic engineering Adopting proper electron transport layers (ETLs) is essential to high‐performance all‐inorganic perovskite light‐emitting diodes (PeLEDs). However, the effect of ETLs has not been comprehensively investigated in all‐inorganic nanocrystal PeLEDs, while 2,2′,2′′‐(1,3,5‐benzenetriyl) tris‐[1‐phenyl‐1H‐benzimidazole] (TPBi) is the most common ETL. Herein, a novel strategy is proposed to enhance the efficiency of nanocrystal PeLEDs. Tris(8‐hydroxyquinoline) aluminum (Alq3) is incorporated into TPBi to form a new ETL TPBi/Alq3/TPBi, simultaneously enabling charge balance and confinement. The green PeLED with new ETL exhibits a maximum external quantum efficiency (EQE) of 1.43%, current efficiency of 4.69 cd A−1, and power efficiency of 1.84 lm W−1, which are 191%, 192%, and 211% higher than those of PeLEDs with conventional ETL TPBi, respectively. Significantly, the EQE is 36‐fold higher than that of PeLED with high electron mobility ETL. Impressively, the full width at half‐maximum of electroluminescence emission is 16 nm, which is the narrowest among CsPbBr3 PeLEDs. The findings may present a rational strategy to enhance the device engineering of all‐inorganic PeLEDs. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) 2019-07-09T08:50:49Z 2019-12-06T16:04:04Z 2019-07-09T08:50:49Z 2019-12-06T16:04:04Z 2018 Journal Article Liu, B., Wang, L., Gu, H., Sun, H., & Demir, H. V. (2018). Highly Efficient Green Light-Emitting Diodes from All-Inorganic Perovskite Nanocrystals Enabled by a New Electron Transport Layer. Advanced Optical Materials, 6(11), 1800220-. doi:10.1002/adom.201800220 https://hdl.handle.net/10356/85459 http://hdl.handle.net/10220/49221 10.1002/adom.201800220 en Advanced Optical Materials © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. |
| spellingShingle | Light‐emitting Diodes Electron Transport Layer Engineering::Electrical and electronic engineering Liu, Baiquan Wang, Lin Gu, Haoshuang Sun, Handong Demir, Hilmi Volkan Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer |
| title | Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer |
| title_full | Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer |
| title_fullStr | Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer |
| title_full_unstemmed | Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer |
| title_short | Highly efficient green light-emitting diodes from all-inorganic perovskite nanocrystals enabled by a new electron transport layer |
| title_sort | highly efficient green light emitting diodes from all inorganic perovskite nanocrystals enabled by a new electron transport layer |
| topic | Light‐emitting Diodes Electron Transport Layer Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/85459 http://hdl.handle.net/10220/49221 |
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