Ultra-low power SRAM and SRAM based PUF design

With the recent development of portable devices and wearable technology, the requirements of long battery life-time, ultra-low power consumption and low cost in system-on-a-chip (SoC) are becoming increasingly significant. However, the aggressive CMOS technology which integrates with more devices a...

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Bibliographic Details
Main Author: Lu, Lu
Other Authors: Kim Tae Hyoung
Format: Thesis
Language:English
Published: 2019
Subjects:
Online Access:https://hdl.handle.net/10356/86213
http://hdl.handle.net/10220/50457
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author Lu, Lu
author2 Kim Tae Hyoung
author_facet Kim Tae Hyoung
Lu, Lu
author_sort Lu, Lu
collection NTU
description With the recent development of portable devices and wearable technology, the requirements of long battery life-time, ultra-low power consumption and low cost in system-on-a-chip (SoC) are becoming increasingly significant. However, the aggressive CMOS technology which integrates with more devices and larger capacitor cache cause high power density. As a crucial approach to meet the ultra-low-power and energy usage, a supply voltage scaling technique has been commonly employed. The power consumption is being effectively suppressed with optimized energy efficiency under near- / sub-threshold voltage region. Meanwhile, static-random-access-memory (SRAM) designs are also facing some challenges when it comes for voltage scaling. In conventional 6T SRAMs, the minimum operating voltage is limited by the conflicting requirements from the ability to write and read stably. In addition, operating SRAMs in the near- or sub-threshold voltage regions have significantly degraded Ion-to-Ioff ratios and exponentially increased device variations, which deteriorates various SRAM design parameters, like read margin, static noise margin and write ability, etc.
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spelling ntu-10356/862132023-07-04T17:20:08Z Ultra-low power SRAM and SRAM based PUF design Lu, Lu Kim Tae Hyoung School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering With the recent development of portable devices and wearable technology, the requirements of long battery life-time, ultra-low power consumption and low cost in system-on-a-chip (SoC) are becoming increasingly significant. However, the aggressive CMOS technology which integrates with more devices and larger capacitor cache cause high power density. As a crucial approach to meet the ultra-low-power and energy usage, a supply voltage scaling technique has been commonly employed. The power consumption is being effectively suppressed with optimized energy efficiency under near- / sub-threshold voltage region. Meanwhile, static-random-access-memory (SRAM) designs are also facing some challenges when it comes for voltage scaling. In conventional 6T SRAMs, the minimum operating voltage is limited by the conflicting requirements from the ability to write and read stably. In addition, operating SRAMs in the near- or sub-threshold voltage regions have significantly degraded Ion-to-Ioff ratios and exponentially increased device variations, which deteriorates various SRAM design parameters, like read margin, static noise margin and write ability, etc. Doctor of Philosophy 2019-11-22T11:45:41Z 2019-12-06T16:18:11Z 2019-11-22T11:45:41Z 2019-12-06T16:18:11Z 2019 Thesis Lu, L. (2019). Ultra-low power SRAM and SRAM based PUF design. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/86213 http://hdl.handle.net/10220/50457 10.32657/10356/86213 en 171 p. application/pdf
spellingShingle Engineering::Electrical and electronic engineering
Lu, Lu
Ultra-low power SRAM and SRAM based PUF design
title Ultra-low power SRAM and SRAM based PUF design
title_full Ultra-low power SRAM and SRAM based PUF design
title_fullStr Ultra-low power SRAM and SRAM based PUF design
title_full_unstemmed Ultra-low power SRAM and SRAM based PUF design
title_short Ultra-low power SRAM and SRAM based PUF design
title_sort ultra low power sram and sram based puf design
topic Engineering::Electrical and electronic engineering
url https://hdl.handle.net/10356/86213
http://hdl.handle.net/10220/50457
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