Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2WSi2 metal gate process for In0.53Ga0.47AsIn0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3Al...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2017
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| Online Access: | https://hdl.handle.net/10356/86528 http://hdl.handle.net/10220/44100 |
| _version_ | 1826110200389566464 |
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| author | Ong, B. S. Pey, Kin Leong Ong, C. Y. Tan, Chuan Seng Antoniadis, D. A. Fitzgerald, E. A. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ong, B. S. Pey, Kin Leong Ong, C. Y. Tan, Chuan Seng Antoniadis, D. A. Fitzgerald, E. A. |
| author_sort | Ong, B. S. |
| collection | NTU |
| description | We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2WSi2 metal gate process for In0.53Ga0.47AsIn0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3Al2O3 shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process. |
| first_indexed | 2024-10-01T02:30:31Z |
| format | Journal Article |
| id | ntu-10356/86528 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:30:31Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/865282020-03-07T13:57:29Z Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors Ong, B. S. Pey, Kin Leong Ong, C. Y. Tan, Chuan Seng Antoniadis, D. A. Fitzgerald, E. A. School of Electrical and Electronic Engineering Ozone Chemical vapor deposition We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2WSi2 metal gate process for In0.53Ga0.47AsIn0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3Al2O3 shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process. Published version 2017-12-06T06:08:53Z 2019-12-06T16:24:02Z 2017-12-06T06:08:53Z 2019-12-06T16:24:02Z 2011 Journal Article Ong, B. S., Pey, K. L., Ong, C. Y., Tan, C. S., Antoniadis, D. A., & Fitzgerald, E. A. (2011). Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 98(18), 182102-. 0003-6951 https://hdl.handle.net/10356/86528 http://hdl.handle.net/10220/44100 10.1063/1.3584024 en Applied Physics Letters © 2011 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.3584024]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | Ozone Chemical vapor deposition Ong, B. S. Pey, Kin Leong Ong, C. Y. Tan, Chuan Seng Antoniadis, D. A. Fitzgerald, E. A. Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors |
| title | Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors |
| title_full | Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors |
| title_fullStr | Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors |
| title_full_unstemmed | Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors |
| title_short | Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors |
| title_sort | comparison between chemical vapor deposited and physical vapor deposited wsi2 metal gate for ingaas n metal oxide semiconductor field effect transistors |
| topic | Ozone Chemical vapor deposition |
| url | https://hdl.handle.net/10356/86528 http://hdl.handle.net/10220/44100 |
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