Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi2WSi2 metal gate process for In0.53Ga0.47AsIn0.53Ga0.47As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al2O3Al2O3 as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al2O3Al...

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Detalles Bibliográficos
Autores principales: Ong, B. S., Pey, Kin Leong, Ong, C. Y., Tan, Chuan Seng, Antoniadis, D. A., Fitzgerald, E. A.
Otros Autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Lenguaje:English
Publicado: 2017
Materias:
Ozone
Chemical vapor deposition
Acceso en línea:https://hdl.handle.net/10356/86528
http://hdl.handle.net/10220/44100

Internet

https://hdl.handle.net/10356/86528
http://hdl.handle.net/10220/44100

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