A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device
This study investigates a low degradation metal-ion conductive bridge RAM (CBRAM) structure. The structure is based on placing a diffusion blocking layer (DBL) between the device's top electrode (TE) and the resistive switching layer (RSL), unlike conventional CBRAMs, where the TE serves as a s...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2017
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/86697 http://hdl.handle.net/10220/44188 |
| _version_ | 1826119758366375936 |
|---|---|
| author | Berco, Dan Chand, Umesh Fariborzi, Hossein |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Berco, Dan Chand, Umesh Fariborzi, Hossein |
| author_sort | Berco, Dan |
| collection | NTU |
| description | This study investigates a low degradation metal-ion conductive bridge RAM (CBRAM) structure. The structure is based on placing a diffusion blocking layer (DBL) between the device's top electrode (TE) and the resistive switching layer (RSL), unlike conventional CBRAMs, where the TE serves as a supply reservoir for metallic species diffusing into the RSL to form a conductive filament (CF) and is kept in direct contact with the RSL. The properties of a conventional CBRAM structure (Cu/HfO2/TiN), having a Cu TE, 10 nm HfO2 RSL, and a TiN bottom electrode, are compared with a 2 nm TaN DBL incorporating structure (Cu/TaN/HfO2/TiN) for 103 programming and erase simulation cycles. The low and high resistive state values for each cycle are calculated and the analysis reveals that adding the DBL yields lower degradation. In addition, the 2D distribution plots of oxygen vacancies, O ions, and Cu species within the RSL indicate that oxidation occurring in the DBL-RSL interface results in the formation of a sub-stoichiometric tantalum oxynitride with higher blocking capabilities that suppresses further Cu insertion beyond an initial CF formation phase, as well as CF lateral widening during cycling. The higher endurance of the structure with DBL may thus be attributed to the relatively low amount of Cu migrating into the RSL during the initial CF formation. Furthermore, this isomorphic CF displays similar cycling behavior to neural ionic channels. The results of numerical analysis show a good match to experimental measurements of similar device structures as well. |
| first_indexed | 2024-10-01T05:05:20Z |
| format | Journal Article |
| id | ntu-10356/86697 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:05:20Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/866972020-03-07T13:57:30Z A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device Berco, Dan Chand, Umesh Fariborzi, Hossein School of Electrical and Electronic Engineering Materials Transition This study investigates a low degradation metal-ion conductive bridge RAM (CBRAM) structure. The structure is based on placing a diffusion blocking layer (DBL) between the device's top electrode (TE) and the resistive switching layer (RSL), unlike conventional CBRAMs, where the TE serves as a supply reservoir for metallic species diffusing into the RSL to form a conductive filament (CF) and is kept in direct contact with the RSL. The properties of a conventional CBRAM structure (Cu/HfO2/TiN), having a Cu TE, 10 nm HfO2 RSL, and a TiN bottom electrode, are compared with a 2 nm TaN DBL incorporating structure (Cu/TaN/HfO2/TiN) for 103 programming and erase simulation cycles. The low and high resistive state values for each cycle are calculated and the analysis reveals that adding the DBL yields lower degradation. In addition, the 2D distribution plots of oxygen vacancies, O ions, and Cu species within the RSL indicate that oxidation occurring in the DBL-RSL interface results in the formation of a sub-stoichiometric tantalum oxynitride with higher blocking capabilities that suppresses further Cu insertion beyond an initial CF formation phase, as well as CF lateral widening during cycling. The higher endurance of the structure with DBL may thus be attributed to the relatively low amount of Cu migrating into the RSL during the initial CF formation. Furthermore, this isomorphic CF displays similar cycling behavior to neural ionic channels. The results of numerical analysis show a good match to experimental measurements of similar device structures as well. Published version 2017-12-21T08:38:10Z 2019-12-06T16:27:34Z 2017-12-21T08:38:10Z 2019-12-06T16:27:34Z 2017 Journal Article Berco, D., Chand, U., & Fariborzi, H. (2017). A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device. Journal of Applied Physics, 122(16), 164502-. 0021-8979 https://hdl.handle.net/10356/86697 http://hdl.handle.net/10220/44188 10.1063/1.5008727 en Journal of Applied Physics © 2017 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.5008727]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 10 p. application/pdf |
| spellingShingle | Materials Transition Berco, Dan Chand, Umesh Fariborzi, Hossein A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| title | A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| title_full | A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| title_fullStr | A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| title_full_unstemmed | A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| title_short | A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| title_sort | numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device |
| topic | Materials Transition |
| url | https://hdl.handle.net/10356/86697 http://hdl.handle.net/10220/44188 |
| work_keys_str_mv | AT bercodan anumericalanalysisandexperimentaldemonstrationofalowdegradationconductivebridgeresistivememorydevice AT chandumesh anumericalanalysisandexperimentaldemonstrationofalowdegradationconductivebridgeresistivememorydevice AT fariborzihossein anumericalanalysisandexperimentaldemonstrationofalowdegradationconductivebridgeresistivememorydevice AT bercodan numericalanalysisandexperimentaldemonstrationofalowdegradationconductivebridgeresistivememorydevice AT chandumesh numericalanalysisandexperimentaldemonstrationofalowdegradationconductivebridgeresistivememorydevice AT fariborzihossein numericalanalysisandexperimentaldemonstrationofalowdegradationconductivebridgeresistivememorydevice |