Impact of voltage-accelerated stress on hole trapping at operating condition
This letter shows that voltage-accelerated stressing (VAS), a common methodology used in gate-oxide reliability testing, can change the capture activity of a time-zero oxide trap (i.e., already active under operating condition). It is found that after VAS, a time-zero oxide trap can be rendered eith...
| Main Authors: | , |
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| Format: | Journal Article |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/86843 http://hdl.handle.net/10220/45201 |
| _version_ | 1811685122936668160 |
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| author | Tung, Zhi Yan Ang, Diing Shenp |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tung, Zhi Yan Ang, Diing Shenp |
| author_sort | Tung, Zhi Yan |
| collection | NTU |
| description | This letter shows that voltage-accelerated stressing (VAS), a common methodology used in gate-oxide reliability testing, can change the capture activity of a time-zero oxide trap (i.e., already active under operating condition). It is found that after VAS, a time-zero oxide trap can be rendered either significantly more or less likely to capture a hole, implying that the applied electrical stress may have changed the atomic structure of the trap. The question on whether such change is relevant to reliability testing would have to be further considered carefully given the significant impact that charge trapping/detrapping at a single oxide trap may have on the behavior of a small-area MOSFET. |
| first_indexed | 2024-10-01T04:39:31Z |
| format | Journal Article |
| id | ntu-10356/86843 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:39:31Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/868432020-03-07T13:57:30Z Impact of voltage-accelerated stress on hole trapping at operating condition Tung, Zhi Yan Ang, Diing Shenp School of Electrical and Electronic Engineering Bias-temperature Instability Random Telegraphic Noise This letter shows that voltage-accelerated stressing (VAS), a common methodology used in gate-oxide reliability testing, can change the capture activity of a time-zero oxide trap (i.e., already active under operating condition). It is found that after VAS, a time-zero oxide trap can be rendered either significantly more or less likely to capture a hole, implying that the applied electrical stress may have changed the atomic structure of the trap. The question on whether such change is relevant to reliability testing would have to be further considered carefully given the significant impact that charge trapping/detrapping at a single oxide trap may have on the behavior of a small-area MOSFET. MOE (Min. of Education, S’pore) Accepted version 2018-07-24T03:11:46Z 2019-12-06T16:30:03Z 2018-07-24T03:11:46Z 2019-12-06T16:30:03Z 2016 Journal Article Tung, Z. Y., & Ang, D. S. (2016). Impact of voltage-accelerated stress on hole trapping at operating condition. IEEE Electron Device Letters, 37(5), 644-647. 0741-3106 https://hdl.handle.net/10356/86843 http://hdl.handle.net/10220/45201 10.1109/LED.2016.2543239 en IEEE Electron Device Letters © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2016.2543239]. 4 p. application/pdf |
| spellingShingle | Bias-temperature Instability Random Telegraphic Noise Tung, Zhi Yan Ang, Diing Shenp Impact of voltage-accelerated stress on hole trapping at operating condition |
| title | Impact of voltage-accelerated stress on hole trapping at operating condition |
| title_full | Impact of voltage-accelerated stress on hole trapping at operating condition |
| title_fullStr | Impact of voltage-accelerated stress on hole trapping at operating condition |
| title_full_unstemmed | Impact of voltage-accelerated stress on hole trapping at operating condition |
| title_short | Impact of voltage-accelerated stress on hole trapping at operating condition |
| title_sort | impact of voltage accelerated stress on hole trapping at operating condition |
| topic | Bias-temperature Instability Random Telegraphic Noise |
| url | https://hdl.handle.net/10356/86843 http://hdl.handle.net/10220/45201 |
| work_keys_str_mv | AT tungzhiyan impactofvoltageacceleratedstressonholetrappingatoperatingcondition AT angdiingshenp impactofvoltageacceleratedstressonholetrappingatoperatingcondition |