Optical reset modulation in the SiO 2 /Cu conductive-bridge resistive memory stack
We show that the negative photoconductivity property of the nanoscale filamentary breakdown path in the SiO2 electrolyte of the SiO2/Cu conductive bridge resistive random access memory (CBRAM) stack is affected by the number of positive-voltage sweeps applied to the Cu electrode (with respect to a n...
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2017
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/86881 http://hdl.handle.net/10220/44216 |
| _version_ | 1811681593714016256 |
|---|---|
| author | Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Ang, Diing Shenp |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Ang, Diing Shenp |
| author_sort | Kawashima, Tomohito |
| collection | NTU |
| description | We show that the negative photoconductivity property of the nanoscale filamentary breakdown path in the SiO2 electrolyte of the SiO2/Cu conductive bridge resistive random access memory (CBRAM) stack is affected by the number of positive-voltage sweeps applied to the Cu electrode (with respect to a non-metal counter electrode). The path's photo-response to white light, of a given intensity, is suppressed with an increasing number of applied positive-voltage sweeps. When this occurs, the path may only be disrupted by the light of a higher intensity. It is further shown that the loss of the path's photosensitivity to the light of a given intensity can be recovered using a negative-voltage sweep (which eliminates the path), followed by the reformation of the path by a positive-voltage sweep. The above behavior is, however, not seen in the SiO2/Si stack (which involves a non-metal Si electrode), suggesting that the photo-response modulation effect is related to the Cu electrode. The demonstrated reversible electrical modulation of the path's photo-response may afford greater flexibility in the electro-optical control of the CBRAM device. |
| first_indexed | 2024-10-01T03:43:25Z |
| format | Journal Article |
| id | ntu-10356/86881 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:43:25Z |
| publishDate | 2017 |
| record_format | dspace |
| spelling | ntu-10356/868812020-03-07T13:57:30Z Optical reset modulation in the SiO 2 /Cu conductive-bridge resistive memory stack Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Ang, Diing Shenp School of Electrical and Electronic Engineering Electrolytes Electrodes We show that the negative photoconductivity property of the nanoscale filamentary breakdown path in the SiO2 electrolyte of the SiO2/Cu conductive bridge resistive random access memory (CBRAM) stack is affected by the number of positive-voltage sweeps applied to the Cu electrode (with respect to a non-metal counter electrode). The path's photo-response to white light, of a given intensity, is suppressed with an increasing number of applied positive-voltage sweeps. When this occurs, the path may only be disrupted by the light of a higher intensity. It is further shown that the loss of the path's photosensitivity to the light of a given intensity can be recovered using a negative-voltage sweep (which eliminates the path), followed by the reformation of the path by a positive-voltage sweep. The above behavior is, however, not seen in the SiO2/Si stack (which involves a non-metal Si electrode), suggesting that the photo-response modulation effect is related to the Cu electrode. The demonstrated reversible electrical modulation of the path's photo-response may afford greater flexibility in the electro-optical control of the CBRAM device. Published version 2017-12-28T05:17:20Z 2019-12-06T16:30:51Z 2017-12-28T05:17:20Z 2019-12-06T16:30:51Z 2017 Journal Article Kawashima, T., Zhou, Y., Yew, K. S., & Ang, D. S. (2017). Optical reset modulation in the SiO 2/Cu conductive-bridge resistive memory stack. Applied Physics Letters, 111(11), 113505-. 0003-6951 https://hdl.handle.net/10356/86881 http://hdl.handle.net/10220/44216 10.1063/1.5003107 en Applied Physics Letters © 2017 The Authors (Published by AIP Publishing). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of The Authors (Published by AIP Publishing). The published version is available at: [http://dx.doi.org/10.1063/1.5003107]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | Electrolytes Electrodes Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Ang, Diing Shenp Optical reset modulation in the SiO 2 /Cu conductive-bridge resistive memory stack |
| title | Optical reset modulation in the SiO
2
/Cu conductive-bridge resistive memory stack |
| title_full | Optical reset modulation in the SiO
2
/Cu conductive-bridge resistive memory stack |
| title_fullStr | Optical reset modulation in the SiO
2
/Cu conductive-bridge resistive memory stack |
| title_full_unstemmed | Optical reset modulation in the SiO
2
/Cu conductive-bridge resistive memory stack |
| title_short | Optical reset modulation in the SiO
2
/Cu conductive-bridge resistive memory stack |
| title_sort | optical reset modulation in the sio 2 cu conductive bridge resistive memory stack |
| topic | Electrolytes Electrodes |
| url | https://hdl.handle.net/10356/86881 http://hdl.handle.net/10220/44216 |
| work_keys_str_mv | AT kawashimatomohito opticalresetmodulationinthesio2cuconductivebridgeresistivememorystack AT zhouyu opticalresetmodulationinthesio2cuconductivebridgeresistivememorystack AT yewkwangsing opticalresetmodulationinthesio2cuconductivebridgeresistivememorystack AT angdiingshenp opticalresetmodulationinthesio2cuconductivebridgeresistivememorystack |