Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/87323 http://hdl.handle.net/10220/48206 |
| _version_ | 1811681920315031552 |
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| author | Lin, Yiding Anantha, P. Lee, Kwang Hong Chua, Shen Lin Shang, Lingru Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lin, Yiding Anantha, P. Lee, Kwang Hong Chua, Shen Lin Shang, Lingru Tan, Chuan Seng |
| author_sort | Lin, Yiding |
| collection | NTU |
| description | Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the stress as observed at top InP surface, compared to that of conventional SiO2 intermediate layer. By introducing IPOCs, the thermal stress decreases with increasing IPOC spacing-to-width (S/W) ratio. Experimentally, high quality InP/Al2O3/Si direct bonding is firstly demonstrated. Seamless bonding interface is observed, along with reasonable bond shear strength of 2.57 MPa and minimal residual stress in the transferred InP layer. Efficiency of the IPOCs is then evaluated by comparing interfacial void densities of InP bonded on dimension-varied-IPOC-patterned Si. A significant void density reduction up to two orders of magnitude is observed, with a decreasing S/W ratio. An optimal S/W ratio of 2.5 is therefore proposed to compromise between the thermal stress degradation (∼10%) and outgassing efficiency improvement (∼90% void density suppression). This work is thus significant as it could provide guidelines to establish high quality hybrid-integrated optoelectronic devices for Si photonic applications. |
| first_indexed | 2024-10-01T03:48:36Z |
| format | Journal Article |
| id | ntu-10356/87323 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:48:36Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/873232020-03-07T13:57:28Z Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding Lin, Yiding Anantha, P. Lee, Kwang Hong Chua, Shen Lin Shang, Lingru Tan, Chuan Seng School of Electrical and Electronic Engineering Research Techno Plaza Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering Homogeneous Direct Bonding Hybrid Integration Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the stress as observed at top InP surface, compared to that of conventional SiO2 intermediate layer. By introducing IPOCs, the thermal stress decreases with increasing IPOC spacing-to-width (S/W) ratio. Experimentally, high quality InP/Al2O3/Si direct bonding is firstly demonstrated. Seamless bonding interface is observed, along with reasonable bond shear strength of 2.57 MPa and minimal residual stress in the transferred InP layer. Efficiency of the IPOCs is then evaluated by comparing interfacial void densities of InP bonded on dimension-varied-IPOC-patterned Si. A significant void density reduction up to two orders of magnitude is observed, with a decreasing S/W ratio. An optimal S/W ratio of 2.5 is therefore proposed to compromise between the thermal stress degradation (∼10%) and outgassing efficiency improvement (∼90% void density suppression). This work is thus significant as it could provide guidelines to establish high quality hybrid-integrated optoelectronic devices for Si photonic applications. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2019-05-15T04:08:22Z 2019-12-06T16:39:31Z 2019-05-15T04:08:22Z 2019-12-06T16:39:31Z 2015 Journal Article Lin, Y., Anantha, P., Lee, K. H., Chua, S. L., Shang, L., & Tan, C. S. (2016). Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding. ECS Journal of Solid State Science and Technology, 5(2), P117-P123. doi:10.1149/2.0351602jss 2162-8769 https://hdl.handle.net/10356/87323 http://hdl.handle.net/10220/48206 10.1149/2.0351602jss en ECS Journal of Solid State Science and Technology © 2015 The Electrochemical Society. All rights reserved. This paper was published in ECS Journal of Solid State Science and Technology and is made available with permission of The Electrochemical Society. 7 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Homogeneous Direct Bonding Hybrid Integration Lin, Yiding Anantha, P. Lee, Kwang Hong Chua, Shen Lin Shang, Lingru Tan, Chuan Seng Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding |
| title | Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding |
| title_full | Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding |
| title_fullStr | Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding |
| title_full_unstemmed | Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding |
| title_short | Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding |
| title_sort | geometry and thermal stress analysis of in plane outgassing channels in al2o3 intermediated inp die to si wafer bonding |
| topic | DRNTU::Engineering::Electrical and electronic engineering Homogeneous Direct Bonding Hybrid Integration |
| url | https://hdl.handle.net/10356/87323 http://hdl.handle.net/10220/48206 |
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