Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region
In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice misma...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/87347 http://hdl.handle.net/10220/47599 |
| _version_ | 1824456710030360576 |
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| author | Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Jia, Bo Wen |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Jia, Bo Wen |
| author_sort | Tan, Kian Hua |
| collection | NTU |
| description | In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W−1 at 5.3 µm. |
| first_indexed | 2025-02-19T03:58:25Z |
| format | Journal Article |
| id | ntu-10356/87347 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:58:25Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/873472020-03-07T13:57:28Z Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Jia, Bo Wen School of Electrical and Electronic Engineering Detectors DRNTU::Engineering::Electrical and electronic engineering Infrared In this study, InSb p-i-n photodetectors with In0.82Al0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In0.82Al0.18Sb barrier layer increased the 77 K R0A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 109 cmHz1/2W−1 at 5.3 µm. NRF (Natl Research Foundation, S’pore) Published version 2019-01-31T06:51:55Z 2019-12-06T16:40:01Z 2019-01-31T06:51:55Z 2019-12-06T16:40:01Z 2018 Journal Article Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region. Optics Express, 26(6), 7227-. doi:10.1364/OE.26.007227 https://hdl.handle.net/10356/87347 http://hdl.handle.net/10220/47599 10.1364/OE.26.007227 en Optics Express © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. 8 p. application/pdf |
| spellingShingle | Detectors DRNTU::Engineering::Electrical and electronic engineering Infrared Tan, Kian Hua Loke, Wan Khai Wicaksono, Satrio Yoon, Soon Fatt Jia, Bo Wen Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region |
| title | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region |
| title_full | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region |
| title_fullStr | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region |
| title_full_unstemmed | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region |
| title_short | Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region |
| title_sort | integration of an insb photodetector on si via heteroepitaxy for the mid infrared wavelength region |
| topic | Detectors DRNTU::Engineering::Electrical and electronic engineering Infrared |
| url | https://hdl.handle.net/10356/87347 http://hdl.handle.net/10220/47599 |
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