Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure

An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

Bibliographic Details
Main Authors: Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., Gao, J.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/87692
http://hdl.handle.net/10220/46805
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author Meng, Q. Q.
Wang, H.
Gao, B.
Liu, C. Y.
Ang, K. S.
Guo, X.
Gao, J.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Meng, Q. Q.
Wang, H.
Gao, B.
Liu, C. Y.
Ang, K. S.
Guo, X.
Gao, J.
author_sort Meng, Q. Q.
collection NTU
description An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.
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spelling ntu-10356/876922020-09-26T22:15:59Z Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. School of Electrical and Electronic Engineering Asia Communications and Photonics Conference 2014 Temasek Laboratories Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data. Published version 2018-12-04T09:25:17Z 2019-12-06T16:47:22Z 2018-12-04T09:25:17Z 2019-12-06T16:47:22Z 2014 Conference Paper Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., & Gao, J. (2014). Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure. Asia Communications and Photonics Conference 2014, ATh3A.22-. doi:10.1364/ACPC.2014.ATh3A.22 https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805 10.1364/ACPC.2014.ATh3A.22 en © 2014 The Author(s) Optical Society of America(OSA). This paper was published in Asia Communications and Photonics Conference 2014 and is made available as an electronic reprint (preprint) with permission of The Author(s) Optical Society of America(OSA). The published version is available at: [http://dx.doi.org/10.1364/ACPC.2014.ATh3A.22]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
spellingShingle Photodetectors
DRNTU::Engineering::Electrical and electronic engineering
Photodiodes
Meng, Q. Q.
Wang, H.
Gao, B.
Liu, C. Y.
Ang, K. S.
Guo, X.
Gao, J.
Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_full Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_fullStr Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_full_unstemmed Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_short Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
title_sort equivalent circuit model for inp based uni traveling carrier photodiodes with dipole doped structure
topic Photodetectors
DRNTU::Engineering::Electrical and electronic engineering
Photodiodes
url https://hdl.handle.net/10356/87692
http://hdl.handle.net/10220/46805
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