Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.
Main Authors: | , , , , , , |
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Format: | Conference Paper |
Language: | English |
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2018
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Online Access: | https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805 |
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author | Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. |
author_sort | Meng, Q. Q. |
collection | NTU |
description | An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data. |
first_indexed | 2024-10-01T07:20:23Z |
format | Conference Paper |
id | ntu-10356/87692 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:20:23Z |
publishDate | 2018 |
record_format | dspace |
spelling | ntu-10356/876922020-09-26T22:15:59Z Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. School of Electrical and Electronic Engineering Asia Communications and Photonics Conference 2014 Temasek Laboratories Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data. Published version 2018-12-04T09:25:17Z 2019-12-06T16:47:22Z 2018-12-04T09:25:17Z 2019-12-06T16:47:22Z 2014 Conference Paper Meng, Q. Q., Wang, H., Gao, B., Liu, C. Y., Ang, K. S., Guo, X., & Gao, J. (2014). Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure. Asia Communications and Photonics Conference 2014, ATh3A.22-. doi:10.1364/ACPC.2014.ATh3A.22 https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805 10.1364/ACPC.2014.ATh3A.22 en © 2014 The Author(s) Optical Society of America(OSA). This paper was published in Asia Communications and Photonics Conference 2014 and is made available as an electronic reprint (preprint) with permission of The Author(s) Optical Society of America(OSA). The published version is available at: [http://dx.doi.org/10.1364/ACPC.2014.ATh3A.22]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
spellingShingle | Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes Meng, Q. Q. Wang, H. Gao, B. Liu, C. Y. Ang, K. S. Guo, X. Gao, J. Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure |
title | Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure |
title_full | Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure |
title_fullStr | Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure |
title_full_unstemmed | Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure |
title_short | Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure |
title_sort | equivalent circuit model for inp based uni traveling carrier photodiodes with dipole doped structure |
topic | Photodetectors DRNTU::Engineering::Electrical and electronic engineering Photodiodes |
url | https://hdl.handle.net/10356/87692 http://hdl.handle.net/10220/46805 |
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