High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes
In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measu...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/87770 http://hdl.handle.net/10220/45511 |
| _version_ | 1826118456737529856 |
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| author | Meng, Qianqian Wang, Hong Liu, Chongyang Guo, Xin Gao, Jianjun Ang, Kian Siong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Meng, Qianqian Wang, Hong Liu, Chongyang Guo, Xin Gao, Jianjun Ang, Kian Siong |
| author_sort | Meng, Qianqian |
| collection | NTU |
| description | In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz. |
| first_indexed | 2024-10-01T04:43:42Z |
| format | Journal Article |
| id | ntu-10356/87770 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:43:42Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/877702020-09-26T22:17:43Z High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes Meng, Qianqian Wang, Hong Liu, Chongyang Guo, Xin Gao, Jianjun Ang, Kian Siong School of Electrical and Electronic Engineering Temasek Laboratories High Speed Dipole-doped Structure In this paper, top-illuminated InP-based uni-traveling-carrier photodiodes (UTC-PDs) with dipole-doped structure which achieve both high speed and high responsivity simultaneously have been reported. With optimization of device size and layer structure, dipole-doped UTC-PDs have demonstrated a measured optical-to-electrical 3-dB bandwidth of over 40 GHz and a maximum responsivity of 0.6 A/W at optical input power of 100 mW. By using a semi-analytical equivalent circuit model, the 3-dB bandwidth was predicted to be 103 GHz. This high 3-dB bandwidth and responsivity yield a high figure-of-merit value of 61.8 A/W·GHz. NRF (Natl Research Foundation, S’pore) Published version 2018-08-07T06:17:47Z 2019-12-06T16:49:07Z 2018-08-07T06:17:47Z 2019-12-06T16:49:07Z 2017 Journal Article Meng, Q., Wang, H., Liu, C., Guo, X., Gao, J., & Ang, K. S. (2017). High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes. IEEE Journal of the Electron Devices Society, 5(1), 40-44. 2168-6734 https://hdl.handle.net/10356/87770 http://hdl.handle.net/10220/45511 10.1109/JEDS.2016.2623815 en IEEE Journal of the Electron Devices Society © 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. 5 p. application/pdf |
| spellingShingle | High Speed Dipole-doped Structure Meng, Qianqian Wang, Hong Liu, Chongyang Guo, Xin Gao, Jianjun Ang, Kian Siong High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes |
| title | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes |
| title_full | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes |
| title_fullStr | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes |
| title_full_unstemmed | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes |
| title_short | High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes |
| title_sort | high speed and high responsivity inp based uni traveling carrier photodiodes |
| topic | High Speed Dipole-doped Structure |
| url | https://hdl.handle.net/10356/87770 http://hdl.handle.net/10220/45511 |
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