Research progress on flexible oxide-based thin film transistors
Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (T...
Main Authors: | Zhang, Lirong, Xiao, Wenping, Wu, Weijing, Liu, Baiquan |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/87824 http://hdl.handle.net/10220/49296 |
Similar Items
-
Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
by: Kulkarni, Mohit Rameshchandra, et al.
Published: (2019) -
Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron
by: Xiao, Peng, et al.
Published: (2018) -
Optical-reconfigurable carbon nanotube and indium-tin-oxide complementary thin-film transistor logic gates
by: Zou, Jianping, et al.
Published: (2020) -
Oxide thin-film transistor-based vertically stacked complementary inverter for logic and photo-sensor operations
by: Joo, Hyo-Jun, et al.
Published: (2020) -
Al₂O₃/HfO₂ nanolaminate dielectric boosting IGZO-based flexible thin-film transistors
by: Shi, Qiuwei, et al.
Published: (2023)