Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs
Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/88219 http://hdl.handle.net/10220/44615 |
| _version_ | 1811695181303382016 |
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| author | Ajaykumar, Arjun Zhou, Xing Chiah, Siau Beh Syamal, Binit |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ajaykumar, Arjun Zhou, Xing Chiah, Siau Beh Syamal, Binit |
| author_sort | Ajaykumar, Arjun |
| collection | NTU |
| description | Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based noise formulation needs modification in the subthreshold regime. Based on the new formulation, many published results may require reinterpretation. The new formulation is validated with data extracted from the literature for III-V, nanowire, and high-K gate-stack-based devices. |
| first_indexed | 2024-10-01T07:19:23Z |
| format | Journal Article |
| id | ntu-10356/88219 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:19:23Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/882192020-03-07T13:57:31Z Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs Ajaykumar, Arjun Zhou, Xing Chiah, Siau Beh Syamal, Binit School of Electrical and Electronic Engineering Carrier Number Fluctuation Hooge Mobility Fluctuation Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based noise formulation needs modification in the subthreshold regime. Based on the new formulation, many published results may require reinterpretation. The new formulation is validated with data extracted from the literature for III-V, nanowire, and high-K gate-stack-based devices. Accepted version 2018-03-26T05:41:10Z 2019-12-06T16:58:28Z 2018-03-26T05:41:10Z 2019-12-06T16:58:28Z 2017 2017 Journal Article Ajaykumar, A., Zhou, X., Chiah, S. B., & Syamal, B. (2017). Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs. IEEE Transactions on Electron Devices, 64(4), 1702-1707. 0018-9383 https://hdl.handle.net/10356/88219 http://hdl.handle.net/10220/44615 10.1109/TED.2017.2670615 203654 en IEEE Transactions on Electron Devices © 2017 IEEE. |
| spellingShingle | Carrier Number Fluctuation Hooge Mobility Fluctuation Ajaykumar, Arjun Zhou, Xing Chiah, Siau Beh Syamal, Binit Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs |
| title | Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs |
| title_full | Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs |
| title_fullStr | Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs |
| title_full_unstemmed | Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs |
| title_short | Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs |
| title_sort | impact of subthreshold carrier statistics on the low frequency noise in mosfets |
| topic | Carrier Number Fluctuation Hooge Mobility Fluctuation |
| url | https://hdl.handle.net/10356/88219 http://hdl.handle.net/10220/44615 |
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