Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector

Room temperature plasmon-enhanced InAs0.91Sb0.09-based heterojunction n-i-p mid-wave infrared photodetector

Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of materials and device structures. The capability of plasmonic structures to localize electromagnetic wave on the deep subwavelength scale provides...

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Bibliographic Details
Main Authors: Tobing, Landobasa Yosef Mario, Tong, Jinchao, Qiu, Shupeng, Zhang, Dao Hua, Unil Perera, A. G.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Photodetectors
Middle Wavelength Infrared
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/88527
http://hdl.handle.net/10220/47609

Internet

https://hdl.handle.net/10356/88527
http://hdl.handle.net/10220/47609

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