Admittance of a one-dimensional double-barrier resonant tunneling nanostructure
We study the dynamic response of a one-dimensional double-barrier nanostructure to an ac bias. Combining the Schrödinger equation, Poisson equation and the scattering theory, we calculate the internal potential, charge density, and the ac conductance as well. The results show that the charge distrib...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/88776 http://hdl.handle.net/10220/44724 |
| _version_ | 1826109711116664832 |
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| author | Shangguan, Wang Zuo Au Yeung, Tin Cheung Yu, Ya Bin Kam, Chan Hin Zhao, Xuean |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Shangguan, Wang Zuo Au Yeung, Tin Cheung Yu, Ya Bin Kam, Chan Hin Zhao, Xuean |
| author_sort | Shangguan, Wang Zuo |
| collection | NTU |
| description | We study the dynamic response of a one-dimensional double-barrier nanostructure to an ac bias. Combining the Schrödinger equation, Poisson equation and the scattering theory, we calculate the internal potential, charge density, and the ac conductance as well. The results show that the charge distribution is antisymmetric with respect to the center of the double barrier, and depends crucially on the relative position of the Fermi level to the resonant energies of the well. The diagonal emittance is found to have a similar dependence. It is negative (inductive behavior) when the Fermi energy is very close to the resonant energies, and it reaches the negative maximum at resonant energies, while it is always positive (capacitive behavior) when the Fermi energy is within the barrier depth and far from resonance, and develops two peaks closely on both sides of the inductive peak. This result is in agreement with that obtained from discrete model. In addition, we find that the capacitive peaks correspond to the maxima of charge-density fluctuation, and inductive peaks to zero charge-density distribution. Therefore, the sign and magnitude of emittance reflect how the charge piles up inside the device. |
| first_indexed | 2024-10-01T02:22:25Z |
| format | Journal Article |
| id | ntu-10356/88776 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:22:25Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/887762020-03-07T14:02:36Z Admittance of a one-dimensional double-barrier resonant tunneling nanostructure Shangguan, Wang Zuo Au Yeung, Tin Cheung Yu, Ya Bin Kam, Chan Hin Zhao, Xuean School of Electrical and Electronic Engineering Conductance Dynamics We study the dynamic response of a one-dimensional double-barrier nanostructure to an ac bias. Combining the Schrödinger equation, Poisson equation and the scattering theory, we calculate the internal potential, charge density, and the ac conductance as well. The results show that the charge distribution is antisymmetric with respect to the center of the double barrier, and depends crucially on the relative position of the Fermi level to the resonant energies of the well. The diagonal emittance is found to have a similar dependence. It is negative (inductive behavior) when the Fermi energy is very close to the resonant energies, and it reaches the negative maximum at resonant energies, while it is always positive (capacitive behavior) when the Fermi energy is within the barrier depth and far from resonance, and develops two peaks closely on both sides of the inductive peak. This result is in agreement with that obtained from discrete model. In addition, we find that the capacitive peaks correspond to the maxima of charge-density fluctuation, and inductive peaks to zero charge-density distribution. Therefore, the sign and magnitude of emittance reflect how the charge piles up inside the device. Published version 2018-04-26T05:10:07Z 2019-12-06T17:10:42Z 2018-04-26T05:10:07Z 2019-12-06T17:10:42Z 2002 Journal Article Shangguan, W. Z., Au Yeung, T. C., Yu, Y. B., Kam, C. H., & Zhao, X. (2002). Admittance of a one-dimensional double-barrier resonant tunneling nanostructure. Physical Review B - Condensed Matter and Materials Physics, 65(23), 235315-. 2469-9950 https://hdl.handle.net/10356/88776 http://hdl.handle.net/10220/44724 10.1103/PhysRevB.65.235315 en Physical Review B - Condensed Matter and Materials Physics © 2002 American Physical Society (APS). This paper was published in Physical Review B - Condensed Matter and Materials Physics and is made available as an electronic reprint (preprint) with permission of American Physical Society (APS). The published version is available at: [doi:http://dx.doi.org/10.1103/PhysRevB.65.235315]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 8 p. application/pdf |
| spellingShingle | Conductance Dynamics Shangguan, Wang Zuo Au Yeung, Tin Cheung Yu, Ya Bin Kam, Chan Hin Zhao, Xuean Admittance of a one-dimensional double-barrier resonant tunneling nanostructure |
| title | Admittance of a one-dimensional double-barrier resonant tunneling nanostructure |
| title_full | Admittance of a one-dimensional double-barrier resonant tunneling nanostructure |
| title_fullStr | Admittance of a one-dimensional double-barrier resonant tunneling nanostructure |
| title_full_unstemmed | Admittance of a one-dimensional double-barrier resonant tunneling nanostructure |
| title_short | Admittance of a one-dimensional double-barrier resonant tunneling nanostructure |
| title_sort | admittance of a one dimensional double barrier resonant tunneling nanostructure |
| topic | Conductance Dynamics |
| url | https://hdl.handle.net/10356/88776 http://hdl.handle.net/10220/44724 |
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