InAlN/GaN high electron mobility transistors on Si for RF applications
Conventional AlGaN/GaN High Electron Mobility Transistors (HEMTs) have been proven to be a strong competitor in both high voltage and high frequency applications resulting from the intrinsic material properties of GaN such as large bandgap, high electron mobility, high electron saturation velocity...
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| Format: | Thesis |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/88831 http://hdl.handle.net/10220/45971 |