Concentric dopant segregation in CVD-grown N-doped graphene single crystals
Heteroatom doping in graphene leads to bandgap opening and tunable electronic, magnetic and optical properties, which are important for graphene-based electronics applications. In recent years, scalable growth of nitrogen-doped graphene (NG) by chemical vapor deposition (CVD) has been extensively st...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/88943 http://hdl.handle.net/10220/48351 |
| _version_ | 1826117604409868288 |
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| author | Lin, Jinjun Tay, Roland Yingjie Li, Hongling Jing, Lin Tsang, Siu Hon Bolker, Asaf Saguy, Cecile Teo, Edwin Hang Tong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lin, Jinjun Tay, Roland Yingjie Li, Hongling Jing, Lin Tsang, Siu Hon Bolker, Asaf Saguy, Cecile Teo, Edwin Hang Tong |
| author_sort | Lin, Jinjun |
| collection | NTU |
| description | Heteroatom doping in graphene leads to bandgap opening and tunable electronic, magnetic and optical properties, which are important for graphene-based electronics applications. In recent years, scalable growth of nitrogen-doped graphene (NG) by chemical vapor deposition (CVD) has been extensively studied because of its potential for practical applications. A phenomenon that occurs exclusively for CVD-grown NG films is the segregation of doping concentration. However, most studies to date are conducted using highly polycrystalline NG films comprising small grain sizes. It is still unknown whether dopant segregation occurs in single crystalline NG domains. Here, we used hexamethylenetetramine ((CH2)6N4) as a single-source solid precursor to grow hexagonal-shaped monolayer NG single crystals of ∼20 µm on Cu substrates. The NG single crystals exhibit discrete concentric hexagonal rings comprising N depleted regions as determined by Raman spectroscopy. Supported by scanning tunneling microscopy experiments, we propose that the segregation of N dopants is caused by a competing N attachment mechanism to either zigzag or Klein edges during growth; where the former should result in higher N concentration and the latter with lower N concentration. This work provides critical insights into the growth mechanism of CVD-grown NG and enables new opportunities to engineer the properties of graphene by fabrication of lateral heterostructures. |
| first_indexed | 2024-10-01T04:30:21Z |
| format | Journal Article |
| id | ntu-10356/88943 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:30:21Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/889432020-09-26T22:17:37Z Concentric dopant segregation in CVD-grown N-doped graphene single crystals Lin, Jinjun Tay, Roland Yingjie Li, Hongling Jing, Lin Tsang, Siu Hon Bolker, Asaf Saguy, Cecile Teo, Edwin Hang Tong School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories Nitrogen-doped Graphene DRNTU::Engineering::Electrical and electronic engineering Chemical Vapor Deposition Heteroatom doping in graphene leads to bandgap opening and tunable electronic, magnetic and optical properties, which are important for graphene-based electronics applications. In recent years, scalable growth of nitrogen-doped graphene (NG) by chemical vapor deposition (CVD) has been extensively studied because of its potential for practical applications. A phenomenon that occurs exclusively for CVD-grown NG films is the segregation of doping concentration. However, most studies to date are conducted using highly polycrystalline NG films comprising small grain sizes. It is still unknown whether dopant segregation occurs in single crystalline NG domains. Here, we used hexamethylenetetramine ((CH2)6N4) as a single-source solid precursor to grow hexagonal-shaped monolayer NG single crystals of ∼20 µm on Cu substrates. The NG single crystals exhibit discrete concentric hexagonal rings comprising N depleted regions as determined by Raman spectroscopy. Supported by scanning tunneling microscopy experiments, we propose that the segregation of N dopants is caused by a competing N attachment mechanism to either zigzag or Klein edges during growth; where the former should result in higher N concentration and the latter with lower N concentration. This work provides critical insights into the growth mechanism of CVD-grown NG and enables new opportunities to engineer the properties of graphene by fabrication of lateral heterostructures. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2019-05-24T02:27:28Z 2019-12-06T17:14:17Z 2019-05-24T02:27:28Z 2019-12-06T17:14:17Z 2018 Journal Article Lin, J., Tay, R. Y., Li, H., Jing, L., Tsang, S. H., Bolker, A., . . . Teo, E. H. T. (2018). Concentric dopant segregation in CVD-grown N-doped graphene single crystals. Applied Surface Science, 454, 121-129. doi:10.1016/j.apsusc.2018.05.132 0169-4332 https://hdl.handle.net/10356/88943 http://hdl.handle.net/10220/48351 10.1016/j.apsusc.2018.05.132 en Applied Surface Science © 2018 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V. 30 p. application/pdf |
| spellingShingle | Nitrogen-doped Graphene DRNTU::Engineering::Electrical and electronic engineering Chemical Vapor Deposition Lin, Jinjun Tay, Roland Yingjie Li, Hongling Jing, Lin Tsang, Siu Hon Bolker, Asaf Saguy, Cecile Teo, Edwin Hang Tong Concentric dopant segregation in CVD-grown N-doped graphene single crystals |
| title | Concentric dopant segregation in CVD-grown N-doped graphene single crystals |
| title_full | Concentric dopant segregation in CVD-grown N-doped graphene single crystals |
| title_fullStr | Concentric dopant segregation in CVD-grown N-doped graphene single crystals |
| title_full_unstemmed | Concentric dopant segregation in CVD-grown N-doped graphene single crystals |
| title_short | Concentric dopant segregation in CVD-grown N-doped graphene single crystals |
| title_sort | concentric dopant segregation in cvd grown n doped graphene single crystals |
| topic | Nitrogen-doped Graphene DRNTU::Engineering::Electrical and electronic engineering Chemical Vapor Deposition |
| url | https://hdl.handle.net/10356/88943 http://hdl.handle.net/10220/48351 |
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