Concentric dopant segregation in CVD-grown N-doped graphene single crystals

Concentric dopant segregation in CVD-grown N-doped graphene single crystals

Heteroatom doping in graphene leads to bandgap opening and tunable electronic, magnetic and optical properties, which are important for graphene-based electronics applications. In recent years, scalable growth of nitrogen-doped graphene (NG) by chemical vapor deposition (CVD) has been extensively st...

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Bibliographic Details
Main Authors: Lin, Jinjun, Tay, Roland Yingjie, Li, Hongling, Jing, Lin, Tsang, Siu Hon, Bolker, Asaf, Saguy, Cecile, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Nitrogen-doped Graphene
DRNTU::Engineering::Electrical and electronic engineering
Chemical Vapor Deposition
Online Access:https://hdl.handle.net/10356/88943
http://hdl.handle.net/10220/48351

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