Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate
The authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. Using the Ti/Al/NiV metal stack scheme...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Online Access: | https://hdl.handle.net/10356/89018 http://hdl.handle.net/10220/47018 |
| _version_ | 1811681469128507392 |
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| author | Tham, Wai Hoe Ang, Diing Shenp Bera, Lakshmi Kanta Surani Bin Doimanan Bhat, Thirumaleshwara N. Kajen, Rasanayagam S. Tan, Hui Ru Teo, Siew Lang Tripathy, Sudhiranjan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tham, Wai Hoe Ang, Diing Shenp Bera, Lakshmi Kanta Surani Bin Doimanan Bhat, Thirumaleshwara N. Kajen, Rasanayagam S. Tan, Hui Ru Teo, Siew Lang Tripathy, Sudhiranjan |
| author_sort | Tham, Wai Hoe |
| collection | NTU |
| description | The authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. Using the Ti/Al/NiV metal stack scheme, the source/drain Ohmic contact optimization is accomplished through the variation of Ti/Al thickness ratio and thermal annealing conditions. For an optimized Ti/Al stack thickness (20/200 nm) annealed at 500 °C for 30 s with smooth contact surface morphology, a specific contact resistivity of ∼6.3 × 10−6 Ω cm2 is achieved. Furthermore, with gold-free Ni/Al gates, the fabricated HEMTs exhibit ION/IOFF ratio of ∼109 and a subthreshold swing of ∼71 mV/dec. The demonstrated gold-free contact schemes thus provide a solution toward the implementation of GaN-based HEMT process on a Si foundry platform. |
| first_indexed | 2024-10-01T03:41:26Z |
| format | Journal Article |
| id | ntu-10356/89018 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:41:26Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/890182020-03-07T13:57:30Z Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate Tham, Wai Hoe Ang, Diing Shenp Bera, Lakshmi Kanta Surani Bin Doimanan Bhat, Thirumaleshwara N. Kajen, Rasanayagam S. Tan, Hui Ru Teo, Siew Lang Tripathy, Sudhiranjan School of Electrical and Electronic Engineering Electrical Resistivity DRNTU::Engineering::Electrical and electronic engineering Aluminium The authors report on the fabrication and characterization of low-temperature processed gold-free Ohmic contacts for AlxGa1−xN/GaN high electron mobility transistors (HEMTs). The HEMT structure grown on a 200-mm diameter Si(111) substrate is used in this study. Using the Ti/Al/NiV metal stack scheme, the source/drain Ohmic contact optimization is accomplished through the variation of Ti/Al thickness ratio and thermal annealing conditions. For an optimized Ti/Al stack thickness (20/200 nm) annealed at 500 °C for 30 s with smooth contact surface morphology, a specific contact resistivity of ∼6.3 × 10−6 Ω cm2 is achieved. Furthermore, with gold-free Ni/Al gates, the fabricated HEMTs exhibit ION/IOFF ratio of ∼109 and a subthreshold swing of ∼71 mV/dec. The demonstrated gold-free contact schemes thus provide a solution toward the implementation of GaN-based HEMT process on a Si foundry platform. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2018-12-17T08:44:43Z 2019-12-06T17:16:02Z 2018-12-17T08:44:43Z 2019-12-06T17:16:02Z 2016 Journal Article Tham, W. H., Ang, D. S., Bera, L. K., Surani Bin Doimanan, Bhat, T. N., Kajen, R. S., Tan, H. R., et al. (2016). Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate. Journal of Vacuum Science & Technology B, 34(4), 041217-. doi:10.1116/1.4952403 2166-2746 https://hdl.handle.net/10356/89018 http://hdl.handle.net/10220/47018 10.1116/1.4952403 en Journal of Vacuum Science & Technology B © 2016 Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). This paper was published in Journal of Vacuum Science & Technology B and is made available as an electronic reprint (preprint) with permission of Science and Technology of Materials, Interfaces and Processing (formerly American Vacuum Society). The published version is available at: [http://dx.doi.org/10.1116/1.4952403]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 8 p. application/pdf |
| spellingShingle | Electrical Resistivity DRNTU::Engineering::Electrical and electronic engineering Aluminium Tham, Wai Hoe Ang, Diing Shenp Bera, Lakshmi Kanta Surani Bin Doimanan Bhat, Thirumaleshwara N. Kajen, Rasanayagam S. Tan, Hui Ru Teo, Siew Lang Tripathy, Sudhiranjan Gold-free contacts on Al x Ga 1-x N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate |
| title | Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate |
| title_full | Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate |
| title_fullStr | Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate |
| title_full_unstemmed | Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate |
| title_short | Gold-free contacts on Al
x
Ga
1-x
N/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate |
| title_sort | gold free contacts on al x ga 1 x n gan high electron mobility transistor structure grown on a 200 mm diameter si 111 substrate |
| topic | Electrical Resistivity DRNTU::Engineering::Electrical and electronic engineering Aluminium |
| url | https://hdl.handle.net/10356/89018 http://hdl.handle.net/10220/47018 |
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