3D imaging and manipulation of subsurface selenium vacancies in PdSe 2
Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy VSe defects and manipulate them...
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| Eará dahkkit: | |
| Materiálatiipa: | Journal Article |
| Giella: | English |
| Almmustuhtton: |
2018
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| Fáttát: | |
| Liŋkkat: | https://hdl.handle.net/10356/89070 http://hdl.handle.net/10220/46084 |
| _version_ | 1826115250953388032 |
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| author | Nguyen, Giang D. Liang, Liangbo Zou, Qiang Fu, Mingming Oyedele, Akinola D. Sumpter, Bobby G. Liu, Zheng Gai, Zheng Xiao, Kai Li, An-Ping |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Nguyen, Giang D. Liang, Liangbo Zou, Qiang Fu, Mingming Oyedele, Akinola D. Sumpter, Bobby G. Liu, Zheng Gai, Zheng Xiao, Kai Li, An-Ping |
| author_sort | Nguyen, Giang D. |
| collection | NTU |
| description | Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy VSe defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe2, a recently discovered pentagonal layered TMD. The VSe show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of VSe defects. This allows a demonstration of direct “writing” and “erasing” of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of VSe in PdSe2, which is much lower than S vacancy in MoS2 or an O vacancy in TiO2. This finding opens an opportunity of defect engineering in PdSe2 for such as controlled phase transformations and resistive-switching memory device application. |
| first_indexed | 2024-10-01T03:52:09Z |
| format | Journal Article |
| id | ntu-10356/89070 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:52:09Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/890702023-07-14T15:51:59Z 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 Nguyen, Giang D. Liang, Liangbo Zou, Qiang Fu, Mingming Oyedele, Akinola D. Sumpter, Bobby G. Liu, Zheng Gai, Zheng Xiao, Kai Li, An-Ping School of Materials Science & Engineering Centre for Programmable Materials DRNTU::Engineering::Materials 3D Imaging PdSe2 Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy VSe defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe2, a recently discovered pentagonal layered TMD. The VSe show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of VSe defects. This allows a demonstration of direct “writing” and “erasing” of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of VSe in PdSe2, which is much lower than S vacancy in MoS2 or an O vacancy in TiO2. This finding opens an opportunity of defect engineering in PdSe2 for such as controlled phase transformations and resistive-switching memory device application. Published version 2018-09-25T02:36:53Z 2019-12-06T17:17:11Z 2018-09-25T02:36:53Z 2019-12-06T17:17:11Z 2018 Journal Article Nguyen, G. D., Liang, L., Zou, Q., Fu, M., Oyedele, A. D., Sumpter, B. G., . . . Li, A.-P. (2018). 3D imaging and manipulation of subsurface selenium vacancies in PdSe2. Physical Review Letters, 121(8), 086101-. doi:10.1103/PhysRevLett.121.086101 0031-9007 https://hdl.handle.net/10356/89070 http://hdl.handle.net/10220/46084 10.1103/PhysRevLett.121.086101 en Physical Review Letters © 2018 American Physical Society. This paper was published in Physical Review Letters and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevLett.121.086101]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials 3D Imaging PdSe2 Nguyen, Giang D. Liang, Liangbo Zou, Qiang Fu, Mingming Oyedele, Akinola D. Sumpter, Bobby G. Liu, Zheng Gai, Zheng Xiao, Kai Li, An-Ping 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 |
| title | 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 |
| title_full | 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 |
| title_fullStr | 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 |
| title_full_unstemmed | 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 |
| title_short | 3D imaging and manipulation of subsurface selenium vacancies in PdSe 2 |
| title_sort | 3d imaging and manipulation of subsurface selenium vacancies in pdse 2 |
| topic | DRNTU::Engineering::Materials 3D Imaging PdSe2 |
| url | https://hdl.handle.net/10356/89070 http://hdl.handle.net/10220/46084 |
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