Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures
We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivit...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/89148 http://hdl.handle.net/10220/47019 |
| _version_ | 1826128520140554240 |
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| author | Tobing, Landobasa Yosef Mario Zhang, Dao-Hua Tong, Jinchao Xie, Yiyang Xu, Zhengji Qiu, Shupeng Ni, Peinan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tobing, Landobasa Yosef Mario Zhang, Dao-Hua Tong, Jinchao Xie, Yiyang Xu, Zhengji Qiu, Shupeng Ni, Peinan |
| author_sort | Tobing, Landobasa Yosef Mario |
| collection | NTU |
| description | We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivity occurred at room temperature; With the decrease of the forward bias, a turning point, at which the photocurrent changes its direction, exist and the corresponding voltage values increases with the decrease of temperature; At all reverse biases, the photocurrents flow in the same direction but the maximum current occurs at about 205 K. A new model is proposed, which can well explain all the observations. |
| first_indexed | 2024-10-01T07:26:16Z |
| format | Journal Article |
| id | ntu-10356/89148 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:26:16Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/891482020-03-07T14:02:36Z Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures Tobing, Landobasa Yosef Mario Zhang, Dao-Hua Tong, Jinchao Xie, Yiyang Xu, Zhengji Qiu, Shupeng Ni, Peinan School of Electrical and Electronic Engineering Semiconductors Heterostructures DRNTU::Engineering::Electrical and electronic engineering We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivity occurred at room temperature; With the decrease of the forward bias, a turning point, at which the photocurrent changes its direction, exist and the corresponding voltage values increases with the decrease of temperature; At all reverse biases, the photocurrents flow in the same direction but the maximum current occurs at about 205 K. A new model is proposed, which can well explain all the observations. ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Published version 2018-12-17T08:45:52Z 2019-12-06T17:18:56Z 2018-12-17T08:45:52Z 2019-12-06T17:18:56Z 2016 Journal Article Tong, J., Xie, Y., Xu, Z., Qiu, S., Ni, P., Tobing, L. Y. M., & Zhang, D.-H. (2016). Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures. AIP Advances, 6(2), 025120-. doi:10.1063/1.4942936 https://hdl.handle.net/10356/89148 http://hdl.handle.net/10220/47019 10.1063/1.4942936 en AIP Advances © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). 7 p. application/pdf |
| spellingShingle | Semiconductors Heterostructures DRNTU::Engineering::Electrical and electronic engineering Tobing, Landobasa Yosef Mario Zhang, Dao-Hua Tong, Jinchao Xie, Yiyang Xu, Zhengji Qiu, Shupeng Ni, Peinan Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures |
| title | Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures |
| title_full | Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures |
| title_fullStr | Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures |
| title_full_unstemmed | Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures |
| title_short | Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures |
| title_sort | study of dual color infrared photodetection from n gasb n inassb heterostructures |
| topic | Semiconductors Heterostructures DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/89148 http://hdl.handle.net/10220/47019 |
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