Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures

Study of dual color infrared photodetection from n-GaSb/n-InAsSb heterostructures

We report detailed investigation of n-GaSb/n-InAsSb heterostructure photodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructure photodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivit...

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Detalhes bibliográficos
Principais autores: Tobing, Landobasa Yosef Mario, Zhang, Dao-Hua, Tong, Jinchao, Xie, Yiyang, Xu, Zhengji, Qiu, Shupeng, Ni, Peinan
Outros Autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado em: 2018
Assuntos:
Semiconductors
Heterostructures
DRNTU::Engineering::Electrical and electronic engineering
Acesso em linha:https://hdl.handle.net/10356/89148
http://hdl.handle.net/10220/47019

Internet

https://hdl.handle.net/10356/89148
http://hdl.handle.net/10220/47019

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