Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures
The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switc...
| Principais autores: | , , , , , , , , , , |
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| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2018
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| Acesso em linha: | https://hdl.handle.net/10356/89334 http://hdl.handle.net/10220/44855 |
| _version_ | 1826129173237727232 |
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| author | Wang, Le Zhang, Qinghua Chang, Lei You, Lu He, Xu Jin, Kuijuan Gu, Lin Guo, Haizhong Ge, Chen Feng, Yaqing Wang, Junling |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Wang, Le Zhang, Qinghua Chang, Lei You, Lu He, Xu Jin, Kuijuan Gu, Lin Guo, Haizhong Ge, Chen Feng, Yaqing Wang, Junling |
| author_sort | Wang, Le |
| collection | NTU |
| description | The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb‐SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb‐SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates. |
| first_indexed | 2024-10-01T07:36:23Z |
| format | Journal Article |
| id | ntu-10356/89334 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:36:23Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/893342023-07-14T15:52:27Z Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures Wang, Le Zhang, Qinghua Chang, Lei You, Lu He, Xu Jin, Kuijuan Gu, Lin Guo, Haizhong Ge, Chen Feng, Yaqing Wang, Junling School of Materials Science & Engineering Heterostructures Memory The rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO3) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO3/Nb‐SrTiO3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO3/Nb‐SrTiO3 interface and causes the resistive switching behavior. An ON/OFF ratio of about 105 at room temperature is observed, which can be modulated by controlling the oxygen vacancies during sample fabrication or by varying the rare earth element in RNiO3. The findings provide an important step forward toward the development of multifunctional electronic devices based on perovskite nickelates. MOE (Min. of Education, S’pore) Accepted version 2018-05-22T03:43:39Z 2019-12-06T17:23:07Z 2018-05-22T03:43:39Z 2019-12-06T17:23:07Z 2017 Journal Article Wang, L., Zhang, Q., Chang, L., You, L., He, X., Jin, K., et al. (2017). Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures. Advanced Electronic Materials, 3(10), 1700321-. https://hdl.handle.net/10356/89334 http://hdl.handle.net/10220/44855 10.1002/aelm.201700321 en Advanced Electronic Materials © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Electronic Materials, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/aelm.201700321]. 25 p. application/pdf |
| spellingShingle | Heterostructures Memory Wang, Le Zhang, Qinghua Chang, Lei You, Lu He, Xu Jin, Kuijuan Gu, Lin Guo, Haizhong Ge, Chen Feng, Yaqing Wang, Junling Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures |
| title | Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures |
| title_full | Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures |
| title_fullStr | Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures |
| title_full_unstemmed | Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures |
| title_short | Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures |
| title_sort | electrochemically driven giant resistive switching in perovskite nickelates heterostructures |
| topic | Heterostructures Memory |
| url | https://hdl.handle.net/10356/89334 http://hdl.handle.net/10220/44855 |
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