Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min−1 or les...
| Main Authors: | , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/89338 http://hdl.handle.net/10220/46201 |
| _version_ | 1826113962374070272 |
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| author | Tang, Shujie Wang, Haomin Wang, Hui Shan Sun, Qiujuan Zhang, Xiuyun Cong, Chunxiao Xie, Hong Liu, Xiaoyu Zhou, Xiaohao Huang, Fuqiang Chen, Xiaoshuang Yu, Ting Ding, Feng Xie, Xiaoming Jiang, Mianheng |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Tang, Shujie Wang, Haomin Wang, Hui Shan Sun, Qiujuan Zhang, Xiuyun Cong, Chunxiao Xie, Hong Liu, Xiaoyu Zhou, Xiaohao Huang, Fuqiang Chen, Xiaoshuang Yu, Ting Ding, Feng Xie, Xiaoming Jiang, Mianheng |
| author_sort | Tang, Shujie |
| collection | NTU |
| description | The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min−1 or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min−1, thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm2 V−1 s−1 at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process. |
| first_indexed | 2024-10-01T03:31:46Z |
| format | Journal Article |
| id | ntu-10356/89338 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:31:46Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/893382023-02-28T19:36:13Z Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride Tang, Shujie Wang, Haomin Wang, Hui Shan Sun, Qiujuan Zhang, Xiuyun Cong, Chunxiao Xie, Hong Liu, Xiaoyu Zhou, Xiaohao Huang, Fuqiang Chen, Xiaoshuang Yu, Ting Ding, Feng Xie, Xiaoming Jiang, Mianheng School of Physical and Mathematical Sciences DRNTU::Science::Physics Quantum Hall Surfaces, Interfaces and Thin Films The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min−1 or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min−1, thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm2 V−1 s−1 at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process. Published version 2018-10-03T05:29:47Z 2019-12-06T17:23:13Z 2018-10-03T05:29:47Z 2019-12-06T17:23:13Z 2015 Journal Article Tang, S., Wang, H., Wang, H. S., Sun, Q., Zhang, X., Cong, C., . . . Jiang, M. (2015). Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride. Nature Communications, 6, 6499-. doi:10.1038/ncomms7499 https://hdl.handle.net/10356/89338 http://hdl.handle.net/10220/46201 10.1038/ncomms7499 25757864 en Nature Communications © 2015 Macmillan Publishers Limited. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ 7 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics Quantum Hall Surfaces, Interfaces and Thin Films Tang, Shujie Wang, Haomin Wang, Hui Shan Sun, Qiujuan Zhang, Xiuyun Cong, Chunxiao Xie, Hong Liu, Xiaoyu Zhou, Xiaohao Huang, Fuqiang Chen, Xiaoshuang Yu, Ting Ding, Feng Xie, Xiaoming Jiang, Mianheng Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride |
| title | Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride |
| title_full | Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride |
| title_fullStr | Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride |
| title_full_unstemmed | Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride |
| title_short | Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride |
| title_sort | silane catalysed fast growth of large single crystalline graphene on hexagonal boron nitride |
| topic | DRNTU::Science::Physics Quantum Hall Surfaces, Interfaces and Thin Films |
| url | https://hdl.handle.net/10356/89338 http://hdl.handle.net/10220/46201 |
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